Abstract:We prepare TeOx thin films by vacuum evaporation of TeO2 powder. It is found that the as-deposited TeOx films can represent a two-component system comprising crystalline tellurium particles dispersed in an amorphous TeO2 matrix. Results of the static recording test show that the TeOx films have good writing sensitivity for short-wavelength laser beam (514.5 nm). Primary results of the dynamic recording test at 514.5 nm are also reported. The carrier-to-noise ratio of 30dB is obtained for the disc using a TeOx film as the recording medium. Atomic force microscopy is used to study the microstructure of recorded marks. Micro-area morphology images show that the marks are mechanically deformed, and depressions and bulges have been imaged in the recorded marks, resulting in the scattering of the reading laser beam. The analytical results of transmission electron microscopy show that there is not obvious difference between the phase states of the tellurium particles before and after laser irradiation. Recording mechanisms of the TeOx thin films are discussed based on the experimental results.

Analysis of Short-Wavelength Recording Properties of Aginsbte Thin Films

Optical Properties And Static Recording Performances Of Ag-In-Te-Sb-O Films Using Short-Wavelength Laser

Optical spectral properties and short-wavelength optical storage properties of high reflection Ag5In5Te47Sb33 phase change films prepared by RF magnetron sputtering technology

Optical Properties and Recording Performance of the New Type AgInSbTe Phase Change Film

Optical and Short-wavelength Recording Properties of Ag 8 In 14 Sb 55 Te 23 Phase-change Films

Physical Properties and Optical Recording Performance of In47sb14te39 Phase Change Thin Films Using 514.5 Nm Wavelength Laser Beam

Optical and Short-Wavelength Recording Properties of InSbTe Phase Change Thin Films

Optical recording performance of In47Sb14Te39 phase change thin films using 514.5nm wavelength laser beam

Optical properties of Ag8In14Sb55Te23 phase-change films

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Optical and Recording Properties of Short Wavelength Optical Storage Materials

Short-wavelength phase-change optical data storage in In-Sb-Te alloy films

Optical–electrical Properties of AgInSbTe Phase Change Thin Films under Single Picosecond Laser Pulse Irradiation

Testing of dynamic recording properties for TeOx and Ag-In-Sb-Te-O thin films

Microstructure and optical properties of Ag 5 In 5 Te 47 Sb 33 phase change thin films with high reflection in thermal annealing process

Effects of Film Thickness on the Optical Properties of Aginsbte Phase-Change Films

Short-Wavelength Recording Properties of Teox Thin Films

Si Underlayer Induced Nano-Ablation In Aginsbte Thin Films

Optical Near-Field Simulation of Sb Thin Film Thermal Lens and Its Application in Optical Recording

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Effects Of Sputtering Parameters On The Optical Properties Of Aginsbte Phase-Change Film