Abstract:III-V semiconductor-based photoelectrochemical (PEC) devices show the highest solar-to-electricity or solar-to-fuel conversion efficiencies. GaInP is a relevant top photoabsorber layer or a charge-selective contact in PEC for integrated and direct solar fuel production, due to its tunable lattice constant, electronic band structure, and favorable optical properties. To enhance the stability of its surface against chemical corrosion which leads to decomposition, we deposit a GaN protection and passivation layer. The n-doped GaInP(100) epitaxial layers were grown by metalorganic chemical vapor deposition on top of GaAs(100) substrate. Subsequently, thin 1-20 nm GaN films were grown on top of the oxidized GaInP surfaces by atomic layer deposition. We studied the band alignment of these multi-junction heterostructures by X-ray and ultraviolet photoelectron spectroscopy. Due to the limited emission depth of photoelectrons, we determined the band alignment by a series of separate measurements in which we either modified the GaInP(100) surface termination or the film thickness of the grown GaN on GaInP(100) buffer layers. On n-GaInP(100) surfaces prepared with the well-known phosphorus-rich (2x2)/c(4x2) reconstruction we found up-ward surface band bending (BB) of 0.34 eV, and Fermi level pinning due to the present surface states. Upon oxidation, the surface states are partially passivated resulting in a reduction of BB to 0.12 eV and a valence band offset (VBO) between GaInP and oxide bands of 2.0 eV. Between the GaInP(100) buffer layer and the GaN passivation layer, we identified a VBO of 1.8 eV. The corresponding conduction band offset of -0.2 eV is found to be rather small. Therefore, we evaluate the application of the GaN passivation layer as a promising technological step not only to reduce surface states but also to increase the stability of the surfaces of photoelectrochemical devices.

Stable Response to Visible Light of Ingan Photoelectrodes

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Photocatalysis of InGaN Nanodots Responsive to Visible Light

Growth of In‐rich and Ga‐rich InGaN Alloys by MOCVD and Fabrication of InGaN‐based Photoelectrodes

Photoelectric characteristic of single-phase InxGa1-xN films with tunable bandgap through RF magnetron sputtering

Photoemission enhancement of InxGa1-xN nanowire array photocathode

Luminescence Properties of InxGa1−xN (x∼ 0.04) Films Grown by Metal Organic Vapour Phase Epitaxy

Remarkable Enhancement in Photocurrent of In0.20ga0.80n Photoanode by Using an Electrochemical Surface Treatment

Steady and Transient Optical Properties of Cubic Ingan Epilayers

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Photoconductivity in In x Ga 1-x N epilayers

An efficient In0.30Ga0.70N photoelectrode by decreasing the surface recombination centres in a H2SO4 aqueous solution

Full-composition-graded InxGa1−xN Films Grown by Molecular Beam Epitaxy

Photoemission study and band alignment of GaN passivation layers on GaInP heterointerface

Fast self-powered n-InGaN layer/p-Cu2O microcrystal visible-light photoelectrochemical photodetector with high photocurrent and responsivity

High Responsivity and High Speed InGaN-based Blue-Light Photodetectors on Si Substrates.

Effect Of Indium Ambient On Electrical Properties Of Mg-Doped Alxga1-Xn

High Performance Rigid and Flexible Visible-Light Photodetectors Based on Aligned X(In, Ga)P Nanowire Arrays

Research on reflection-mode InxGa1-xN thin film photocathode

Enhanced InGaN/GaN Photoelectrodes for Visible‐light‐driven Hydrogen Generation by Surface Roughening

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates