Abstract:Transition metal alloyed atomic layer deposition coatings have tunable intermediate bands that enable energetic alignment with model photoabsorbers, such as GaP, and achieve efficient charge separation and 100‐h stable water oxidation in neutral pH phosphate buffer. Stable photoelectrochemical solar fuel production requires protective coatings to achieve effective charge separation, transport, and injection at the semiconductor–liquid interfaces, implying that the coating should energetically align its intermediate band (IB) with both the photoabsorber's band edge and co‐catalyst's potentials. Yet approaches to adjust coating IB positions to accommodate various semiconductor light absorbers for constructing efficient and stable photoelectrodes have not been developed. Herein, three types of transition metal (M = Mn2+, Mn3+, and Cr3+ ions) alloyed TiO2 coatings are discovered using atomic layer deposition (ALD). The IB energetics of these coatings are characterized by X‐ray photoelectron spectroscopy and are found to be tunable inside the TiO2 bandgap, through varying ALD growth conditions. By applying these coatings to n‐type GaP and integrating with IrOx co‐catalysts, the water‐oxidation J–E performance is comparable to an uncoated corroding GaP photoanode. It reaches the bulk recombination limit of the GaP and achieves ≈28% absorbed photon to current efficiency under 475‐nm light excitation (6.48 mW cm−2) and 100‐h stable water oxidation. The outstanding performance and stability are attributed to the efficient charge separation and hole transport, as allowed by the energy alignment of the coating IB and the GaP valence band edge.

An efficient In0.30Ga0.70N photoelectrode by decreasing the surface recombination centres in a H2SO4 aqueous solution

Remarkable Enhancement in Photocurrent of In0.20ga0.80n Photoanode by Using an Electrochemical Surface Treatment

Surface Passivation of InGaN Nanorods Using H3PO4 Treatment for Enhanced Photoelectrochemical Performance

Anodic Reconstructed p+‐GaAs/a‐InAsN for Stable and Efficient Photoelectrochemical Hydrogen Evolution

A promising InGaAsN photoanode protected by multifunctional GaN nanocrystal for efficient photoelectrochemical water splitting

Incorporation of Sulfate Anions and Sulfur Vacancies in ZnIn 2 S 4 Photoanode for Enhanced Photoelectrochemical Water Splitting

Surface Engineering of Environment-Friendly Ag-In-S Quantum Dots for Stable and Efficient Photoelectrochemical Cells

Enhanced InGaN/GaN Photoelectrodes for Visible‐light‐driven Hydrogen Generation by Surface Roughening

Investigation on in situ sulfide/nitride/phosphide treatments of hematite photoanodes for improved solar water oxidation

Enhancement in Solar Hydrogen Generation Efficiency Using InGaN Photoelectrode after Surface Roughening Treatment with Nano-Sized Ni Mask

Electronic Engineering of Transition Metal Zn-doped InGaN Nanorods Arrays for Photoelectrochemical Water Splitting

Stabilization of GaAs photoanodes by in situ deposition of nickel-borate surface catalysts as hole trapping sites

High‐Performance Si Photocathode Enabled by Spatial Decoupling Multifunctional Layers for Water Splitting

Improved Photocatalytic Activity and Stability of InGaN Quantum Dots/c3n4 Heterojunction Photoelectrode for CO2 Reduction and Hydrogen Production

Enhanced charge separation and interfacial charge transfer of InGaN nanorods/C3N4 heterojunction photoanode

Identifying and Removing the Interfacial States in Metal-Oxide-Semiconductor Schottky Si Photoanodes for the Highest Fill Factor

A Novel Approach for Achieving High‐Efficiency Photoelectrochemical Water Oxidation in InGaN Nanorods Grown on Si System: MXene Nanosheets as Multifunctional Interfacial Modifier

Tuning Surface Electronics State of P-Doped In2.77S4/In(OH)3 Toward Efficient Photoelectrochemical Water Oxidation.

Nonstoichiometric In–S Group Yielding Efficient Carrier Transfer Pathway in In2S3 Photoanode for Solar Water Oxidation

Tuning Intermediate Bands of Protective Coatings to Reach the Bulk‐Recombination Limit of Stable Water‐Oxidation GaP Photoanodes

Significant Improvements in InGaN/GaN Nano-Photoelectrodes for Hydrogen Generation by Structure and Polarization Optimization