Enhancement in Solar Hydrogen Generation Efficiency Using InGaN Photoelectrode after Surface Roughening Treatment with Nano-Sized Ni Mask

Tao,Zhi Ting,Li Ming-Xue,Xie Zi-Li,Zhang Rong,Liu Bin,Li Yi,Zhuang Zhe,Zhang Guo-Gang,Jiang Fu-Long,Chen Peng,Zheng You-Dou
DOI: https://doi.org/10.1088/1674-1056/23/9/096203
2014-01-01
Abstract:A significant enhancement in solar hydrogen generation efficiency has been achieved by inductive coupled etching (ICP) surface roughening treatment using nano-sized nickel mask. As much as 7 times improvement of photocurrent is demonstrated in comparison with a planar one fabricated from the same parent wafer. Under identical illumination conditions in HBr solution, the incident photon conversion efficiency (IPCE) shows an enhancement with a factor of 3, which even exceed 54% at 400 nm wavelength. We believe the enhancement is attributed to several facts including improvement in absorption, reacting area, carrier localization and carrier lifetime.
What problem does this paper attempt to address?