Significant Improvements in InGaN/GaN Nano-Photoelectrodes for Hydrogen Generation by Structure and Polarization Optimization

Tao,Ting Zhi,Bin Liu,Mingxue Li,Zhe Zhuang,Jiangping Dai,Yi Li,Fulong Jiang,Wenjun Luo,Zili Xie,Dunjun Chen,Peng Chen,Zhaosheng Li,Zhigang Zou,Rong Zhang,Youdou Zheng
DOI: https://doi.org/10.1038/srep20218
IF: 4.6
2016-01-01
Scientific Reports
Abstract:The photoelectrodes based on III-nitride semiconductors with high energy conversion efficiency especially for those self-driven ones are greatly desirable for hydrogen generation. In this study, highly ordered InGaN/GaN multiple-quantum-well nanorod-based photoelectrodes have been fabricated by a soft UV-curing nano-imprint lithography and a top-down etching technique, which improve the incident photon conversion efficiency (IPCE) from 16% (planar structure) to 42% (@ wavelength = 400 nm). More significantly, the turn-on voltage is reduced low to −0.6 V, which indicates the possibility of achieving self-driven. Furthermore, SiO2/Si3N4 dielectric distributed Bragg reflectors are employed to further improve the IPCE up to 60%. And the photocurrent (@ 1.1 V) is enhanced from 0.37 mA/cm2 (original planar structure) to 1.5 mA/cm2. These improvements may accelerate the possible applications for hydrogen generation with high energy-efficiency.
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