Fabrication of an InGaN/GaN nanotube-based photoanode using nano-imprint lithography and a secondary sputtering process for water splitting

Junjie Kang,Hak-Jong Choi,Fang Ren,Jinping Ao,Hongjian Li,Yi Li,Weichuan Du,Kun Zhou,Hao Tan,Daihong Huh,Panpan Li,Meng Liang,Songxin Gao,Chun Tang,Xiaoyan Yi,Heon Lee,Zhiqiang Liu
DOI: https://doi.org/10.7567/1347-4065/ab293e
IF: 1.5
2019-07-10
Japanese Journal of Applied Physics
Abstract:In this research, an InGaN/GaN nanotube-based photoanode has been fabricated by nano-imprintlithography and a secondary sputtering process. The involvement of a Au nano-ring mask allowed dryetching with a high aspect ratio on the InGaN/GaN substrate. After device fabrication, the measuredoptical spectrum showed this innovative structure provided low reflectance and high absorbance atthe wavelength around the ultraviolet range. The photoelectrochemical properties indicated optimizedtube height could efficiently enhance the water splitting efficiency by 15 times at 1.23 V versusRHE by increasing the surface reactive area and tuning the optical spectrum properties. The IPCEresult also demonstrated a corresponding enhancement.
physics, applied
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