Real-Time Evolution Of Tunneling Magnetoresistance During Annealing In Cofeb/Mgo/Cofeb Magnetic Tunnel Junctions

Weigang Wang,Chaoying Ni,Abdul K. Rumaiz,Yizhong Wang,Xin Fan,Takahiro Moriyama,Rong Cao,Qiye Wen,Huaiwu Zhang,John Xiao
DOI: https://doi.org/10.1063/1.2903147
IF: 4
2008-01-01
Applied Physics Letters
Abstract:We report the study of the real-time evolution of tunneling magnetoresistance (TMR) in CoFeB/MgO/CoFeB junctions during annealing at 380 degrees C. The TMR quickly developed at the early stage of the annealing, with 200% magnetoresistance observed in less than 10 min, followed by a slow approach to saturation. This evolution of TMR was correlated with the structural changes, including crystallization of amorphous CoFeB electrodes and improvement of barrier quality during the annealing. (c) 2008 American Institute of Physics.
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