Abstract:Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

Characterization of Intrinsic Donor Defects in Zno Ceramics by Dielectric Spectroscopy

Characterization of dielectric behavior in ZnO electroceramic: Superior grain boundary, inferior grain boundary and grain

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Electronic structure of defects and doping in ZnO: Oxygen vacancy and nitrogen doping

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

An experimental and theoretical insights into the dielectric properties of (Li, Nd) co-doped ZnO ceramics

Defect-induced Magnetism in Undoped Wide Band Gap Oxides: Zinc Vacancies in ZnO As an Example

Donor Defects Enhanced Ferromagnetism in Co:Zno Films

Exploring the Interactions of Oxygen with Defective ZnO

Revisiting The Low-Temperature Dielectric Properties Of Zno

Defect study in ZnO related structures—A multi-spectroscopic approach

Defect-driven conductivity behavior in lead-free KNN-based ceramics

Defect Characterization and Magnetic Properties in Un-Doped Zno Thin Film Annealed in A Strong Magnetic Field

Electrical levels of defect investigation of Zr O2 thin film by spectroscopic ellipsometry

Mechanical and dielectric investigation on point defects and phase transition in ferroelectric ceramics

An analytic approach to the degradation of double-Schottky barrier: Theoretical prediction of V O 0 –Zn i 2+ :Zn i 2+ as dominant mobile ion in ZnO electroceramic

Observation of the Defect States in Individual Co-Doped Zno Dilute Magnetic Semiconducting Nanostructures by Electron Energy-Loss Spectroscopy

Defect-Related Vibrational and Photoluminescence Spectroscopy of A Codoped Zno : Al : N Film

The interaction between oxygen vacancies and doping atoms in ZnO

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Frequency Response of ZnO-doped BaZrxTi1−xO3 Ceramics