Abstract:The increase in dielectric constant (εr′) with increasing temperatures at different frequencies is likely due to the localized nature of hopping charge carriers in addition to interfacial polarization due to space charge. Bulk pristine Zn0.9Cu0.05Li0.05O1‐δ also exhibits ferroelectricity and paramagnetic behaviour. Dielectric constants determine the level of miniaturization in capacitive components involved in electronic devices. Cu‐Li co‐doping is attempted to introduce the multiferroic relaxor nature of dielectricity and dilute magnetism in the bulk material simultaneously as Li+ ion substitution in ZnO lattice is known to form acceptor states within the band gap of ZnO and paramagnetic Cu2+ present in ZnO lattice can introduce dilute magnetism. Phase purity and substitution of Cu2+ and Li+ ions in ZnO lattice along with oxide‐ion vacancy formation was confirmed using Powder x‐ray diffraction (XRD), Scanning Electron Microscope (SEM), and Energy Dispersive X‐ray analysis (EDX), X‐ray Photoelectron Spectroscopy (XPS), Inductively Coupled Plasma Mass Spectrometry (ICP‐MS) and Magnetic property measurement system (MPMS) studies. The dielectric constant (εr′) of bulk pristine Zn0.92Cu0.05Li0.03O and Zn0.9Cu0.05Li0.05O is found to be 18000 and 20000 respectively at 1000 Hz frequency at 600 °C. Both dielectric constant and dielectric loss were decreasing with increasing frequencies. The increase in dielectric constant (εr′) with increasing temperatures at different frequencies for Zn0.92Cu0.05Li0.03O1‐δ and Zn0.9Cu0.05Li0.05O1‐δ is likely due to the localized nature of hopping charge carriers in addition to interfacial polarization due to space charge. Tm was found to increase with increasing frequencies suggesting the relaxor nature of dielectricity in the Zn0.9Cu0.05Li0.05O1‐δ. Bulk pristine Zn0.9Cu0.05Li0.05O1‐δ also exhibits ferroelectricity at room temperature with remnant polarization Pr and Vc equal to 4.20e–02 μC/cm2 and 4.1e+03 V/cm at (30KV, 500 Hz) respectively. Zn0.9Cu0.05Li0.05O also shows the paramagnetic behaviour.

Revisiting The Low-Temperature Dielectric Properties Of Zno

Dielectric Relaxation and Strain Behavior of 95.5% Pb(Zn1/3Nb2/3)O3–4.5% PbTiO3 Single Crystals at Cryogenic Temperatures

Relaxor- and Phase-Transition-like Behaviors in ZnO Single Crystals at High Temperatures

Dielectric Relaxation in 91%pb(zn1∕3nb2∕3)o3–9%pbtio3 Single Crystal at Low Temperature

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

High-temperature dielectric relaxation in Pb (Mg1/3 Nb 2/3) O3- PbTiO3 single crystals

High‐Temperature Dielectric Relaxation in Pb(Mg1/3Nb2/3)O3–PbTiO3 Single Crystals

Evolution of Relaxor‐Type High‐k Dielectric in Bulk Pristine Cu2+ and Li+ Co‐Substituted Wurtzite ZnO

Universal Static and Dynamic Properties of the Structural Transition in Pb(Zn1/3Nb2/3)O3

Temperature Dependent Distinct Coupling and Dispersions of Heavy- and Light-Hole Excitonic Polaritons in ZnO

Dielectric, Structural and Microstructural Characteristics of Tetragonal-Structured PLZT Relaxors

Low-Temperature Growth and Properties of Zno Nanowires

Anomalous Relaxation Behaviour in La 0.7 Sr 0.3 MnO 3 (LSMO)-ZnO Nanocomposite

Internal and External Relaxations in Znnb2o6 Ceramics

Unraveling many-body effects in ZnO: Combined study using momentum-resolved electron energy-loss spectroscopy and first-principles calculations

Thickness-Dependent Optical Constants and Annealed Phase Transitions of Ultrathin Zno Films

Dielectric relaxation behavior of ceramics in the Pb(Zn1/3Nb2/3)O-3-BaTiO3-PbTiO3 system

Origin of High-Temperature Relaxor-Like Behavior in Cacu3ti4o12

Temperature Dependence of the Piezotronic Effect in ZnO Nanowires.

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Dielectric anomalies of the relaxor-based 0.9Pb(Mg1∕3Nb2∕3)O3‐0.1PbTiO3 single crystals