Abstract:Formation energies of various intrinsic defects and defect complexes in ZnO have been calculated using a density-functional-theory-based pseudopotential all-electron method. The various defects considered are oxygen vacancy (VO), zinc vacancy (VZn), oxygen at an interstitial site (Oi), Zn at an interstitial site (Zni), Zn at VO (ZnO), O at VZn(OZn), and an antisite pair (combination of the preceding two defects). In addition, defect complexes like (VO+Zni) and Zn-vacancy clusters are studied. The Schokkty pair (VO+VZn) and Frenkel pairs [(VO+Oi) and (VZn+Zni)] are considered theoretically for the first time. Upon comparing the formation energies of these defects, we find that VO would be the dominant intrinsic defect under both Zn-rich and O-rich conditions and it is a deep double donor. Both ZnO and Zni are found to be shallow donors. The low formation energy of donor-type intrinsic defects could lead to difficulty in achieving p-type conductivity in ZnO. Defect complexes have charge transitions deep inside the band gap. The red, yellow, and green photoluminescence peaks of undoped samples can be assigned to some of the defect complexes considered. It is believed that the red luminescence originates from an electronic transition in VO, but we find that it can originate from the antisite ZnO defect. Charge density and electron-localization function analyses have been used to understand the effect of these defects on the ZnO lattice. The electronic structure of ZnO with intrinsic defects has been studied using density-of-states and electronic band structure plots. The acceptor levels introduced by VZn are relatively localized, making it difficult to achieve p-type conductivity with sufficient hole mobility.

Unraveling many-body effects in ZnO: Combined study using momentum-resolved electron energy-loss spectroscopy and first-principles calculations

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Revisiting The Low-Temperature Dielectric Properties Of Zno

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Engineering of Optical and Electrical Properties of ZnO by Non-Equilibrium Thermal Processing: the Role of Zinc Interstitials and Zinc Vacancies

Disentangling the Evolution of Electrons and Holes in photoexcited ZnO nanoparticles

Polarization selectivity of aloof-beam electron energy-loss spectroscopy in one-dimensional ZnO nanorods

Dynamics of the etching effects on the optoelectronic properties of ZnO nanorods

Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations

Structural stability and defect energetics of ZnO from diffusion quantum Monte Carlo

Temperature Dependent Distinct Coupling and Dispersions of Heavy- and Light-Hole Excitonic Polaritons in ZnO

A study of optical properties and electron energy loss spectra of ZnS by linear response theory

Non-equilibrium BN-ZnO: Optical properties and excitonic effects from first principles

Defect study in ZnO related structures—A multi-spectroscopic approach

Relaxor- and Phase-Transition-like Behaviors in ZnO Single Crystals at High Temperatures

Effects of strain on the valence band structure and exciton-polariton energies in ZnO

Polarization Dependent Excitation and High Harmonic Generation from Intense Mid-IR Laser Pulses in ZnO

Size Dependence and Spatial Variation of Electronic Structure in Nonpolar ZnO Nanobelts

Ab Initioinvestigations of Optical Properties of the High-Pressure Phases of ZnO

First-principles Study of Electronic and Dielectric Properties of ZrO2 and HfO2

An EPR study of point defects in zinc oxide thin films