Dynamics of the etching effects on the optoelectronic properties of ZnO nanorods

I Boukhoubza,M Khenfouch,M Achehboune,B Mouthudi,I Zorkani,A Jorio
DOI: https://doi.org/10.1088/1742-6596/1081/1/012010
2018-09-01
Journal of Physics: Conference Series
Abstract:Zinc oxide (ZnO) is a very promising material for optoelectronic applications thanks to its wide direct band gap (3.4 eV), and a high exciton binding energy (60 meV). ZnO based nanostructures are presently being explored for a wide range of applications in nanolasers, nanogenerators, gas sensors, light emitting diodes and solar cells. In this study, we report the preparation of ZnO nanorods and the dynamics of their chemical etching under different concentrations. Characterization was carried out using X-ray diffraction, scanning electronic microscopy and photoluminescence. Thus, the study provides an investigation of the etching time and concentration effects on the optoelectronic properties. We found that all etching conditions are causing a remarkable proportional changes on the materials photonics as it is mainly changing the surface and creating defects. Hence, this study exhibits distinct advantages for optoelectronic devices.
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