Frequency Response of ZnO-doped BaZrxTi1−xO3 Ceramics

YL Wang,LT Li,JQ Qi,ZL Gui
DOI: https://doi.org/10.1016/s0254-0584(01)00534-x
IF: 4.778
2002-01-01
Materials Chemistry and Physics
Abstract:Electrical properties and relaxation characteristics for undoped and ZnO-doped BaZrxTi1−xO3 have been studied via complex impedance measurements. The results suggest that at the grain interior Zn2+ substitutes Ti4+ and serves as an acceptor dopant. STEM and EDX analysis confirm the expected presence of Zn and Ti rich phase at the triangle phase boundaries, but find few signals for zinc at the grain core. More insightful studies are needed in order to clarify this point.
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