Optical Properties of Nitrogen-Doped Sno2 Films: Effect of the Electronegativity on Refractive Index and Band Gap

S. S. Pan,Y. X. Zhang,X. M. Teng,G. H. Li,L. Li
DOI: https://doi.org/10.1063/1.2908197
IF: 2.877
2008-01-01
Journal of Applied Physics
Abstract:The optical properties of nitrogen-doped SnO2 films with different N2∕(N2+O2) gas ratios grown by reactive sputtering were studied by spectroscopy ellipsometry. The optical dielectric functions of the films were simulated by the Tauc-Lorentz model. It was found that the refractive index and extinction coefficient of nitrogen-doped SnO2 films increase and the band gap has a redshift with the increase of the N2 ratios. The general influences of the electronegativity and bond ionicity on the band gap, the refractive index in the spectral region below the fundamental absorption edge of nitrogen-doped SnO2, and other doped semiconductors are demonstrated.
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