Influence of N-Doping on Microstructures and Properties of SnO2 Films

Xiaoxiong Ding,Feng Fang,Jianqing Jiang
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.05.05
2012-01-01
Abstract:The nitrogen-doped SnO 2 thin films were deposited by reactive RF magnetron sputtering on quartz substrates. The impacts of the deposition conditions, including the nitrogen doping, sputtering power, substrate temperature, ratios of O 2/N 2 and O 2/Ar gas-flow rate and pressure, on the microstructures and optical and electrical properties of the N-doped SnO 2 film were studied. The films were characterized with X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy, and conventional surface probes. The results show that the nitrogen doping and oxygen partial pressure significantly affect the microstructures and properties of the fairly compact uniform films. For instance, the N-doped SnO 2 films, grown at the optimized oxygen partial pressure and N-doping level, have a transmittance over 80% in the visible light range, a band-gap of 3.99 eV, and the lowest sheet resistance of 4.8× 10 -3 Ω·cm. The advantages of N-doping over doping of Sb, Te and F were also discussed.
What problem does this paper attempt to address?