Abstract:Mg(x)Zn(1-x)O thin films were grown by the radio-frequency magnetron sputtering technique in Ar + N(2) and O(2) + N(2) ambient with different nitrogen partial pressure ratios on quartz substrates at 773 K. The correlations between the growth ambient and the resultant films properties were discussed. It is found that Mg concentration, structure and band gap of the MgZnO film can be tuned by increasing the nitrogen partial pressure ratio of the Ar + N(2) ambient, but cannot be tailored by changing the nitrogen partial pressure ratio of the O(2) + N(2) ambient. X-ray diffraction shows that the Mg(x)Zn(1-x)O films grown in the Ar + N(2) ambient consist of wurtzite phase at the nitrogen partial pressure ratios from 0% to 50%, a mixture of wurtzite and cubic phases at the ratios of 78-83%, and a cubic phase at 100%, whereas such structure transformation did not exist in the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient by changing the nitrogen partial pressure ratio. The Mg concentration increases linearly with the increasing nitrogen partial pressure ratio of Ar + N(2), but does not vary with the increasing nitrogen partial pressure ratio of O(2) + N(2). The band gap increases linearly from 3.64 to 4.02 eV for the wurtzite Mg(x)Zn(1-x)O deposited in the Ar + N(2) ambient as nitrogen partial pressure ratio increases from 0% to 50%, but the band gap of the Mg(x)Zn(1-x)O film deposited in the O(2) + N(2) ambient keeps a constant of 3.63 eV with oxygen gas and reaches 6.30 eV abruptly in pure nitrogen ambient (without oxygen gas). The Mg(x)Zn(1-x)O films, which are grown in the Ar + N(2) and O(2) + N(2) ambient at nitrogen partial pressure ratio from 50% to 100% and 83% to 100%, respectively, show p-type conduction after annealing.

Effect on Nitrogen Acceptor As Mg is Alloyed into ZnO

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Effect of Magnesium Doping on the Light-Induced Hydrophilicity of Zno Thin Films

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Effects of Mg Concentration on Solubility and Chemical State of N in N-Doped Mgzno Alloy

Nitrogen partial pressure-dependent Mg concentration, structure, and optical properties of Mg x Zn 1− x O film grown by magnetron sputtering

Experimental Investigation on Nitrogen Related Complex Acceptors in Nitrogen-Doped ZnO Films

The effect of Mg doping concentration and annealing on the structure and luminescence properties of ZnO thin films

Effects of Alloying and Localized Electronic States on the Resonant Raman Spectra of Zn1−xMgxO Nanocrystals

Effect Of Growth Ambient On The Structure And Properties Of Mg(X)Zn(1-X)O Thin Films Prepared By Radio-Frequency Magnetron Sputtering

X-ray Photoelectron Spectroscopy Study of Al- and N- Co-Doped P-Type ZnO Thin Films

The enhanced sensing performance of ZnO-based photodetector by Mg doping

Formation of P-Type Mgzno by Nitrogen Doping

Local structures of polar wurtzites Zn_{1-x}Mg_{x}O studied by Raman and {67}Zn/{25}Mg NMR spectroscopies and by total neutron scattering

Identification and Tuning of Zinc-Site Nitrogen-Related Complexes in ZnO Material

Acceptor Formation Mechanisms Determination from Electrical and Optical Properties of P-Type ZnO Doped with Lithium and Nitrogen

Effects of Mg Content on the Optical Properties of MgZnO Fims

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Temperature-Dependent Hall and Photoluminescence Evidence for Conduction-Band Edge Shift Induced by Alloying Zno with Magnesium

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Control of Structure, Conduction Behavior, and Band Gap of Zn1−xMgxO Films by Nitrogen Partial Pressure Ratio of Sputtering Gases