Abstract:The demand for polished silicon wafers has increased significantly in recent years to cater to the development of the semiconductor industry. For example, polished silicon wafer has direct applications in integrated circuits, radio frequency amplifiers, micro-processors, micro-electromechanical systems, etc. To carry out mechanical polishing, lapping, grinding, or single-point diamond turning of silicon, diamond abrasives were extensively used before the implementation of chemo-mechanical polishing. During the diamond-based polishing, a few problems have already been identified, such as the formation of an amorphous phase, heat-affected zones, low material removal, etc. Some research work has also reported that nano-structured abrasives lead to a thin layer of the amorphous phase and a better material removal rate. In the same direction, a molecular dynamics simulation is carried out in this paper to investigate the mechanism of material removal from monocrystalline silicon during the diamond-abrasive-based polishing process. The present work is mainly focused on the dynamics of material removal phenomena near the abrasive particles at the nanometric scale by considering stress, lattice, cohesive energy, etc. This reveals that a higher value of indentation force results in surface buckling, which creates a zone of both compressive and tensile stresses, which increases the coordination number and forms β-silicon just ahead of the abrasive particle. This mechanism happens by developing a β-silicon phase on the surface with a thickness beyond a certain value of indentation force on the zone of compression. Buckling on this phase happens due to stress localisation in compression, as the flow stress of this phase is less than that of diamond cubic lattices. To avoid the mechanism of surface buckling and process silicon material on the surface, the indentation force needs to be maintained below a critical value. In the present case, it was found that the indentation force of less than or equal to 190 nN for the abrasive size of φ8 nm does the material removal by surface processing only without surface buckling. It was also found that surface processing helps to reduce the depth of the amorphous layer significantly without compromising the material removal rate or the generation of a wavy surface. Thus, the present mechanism will help in the polishing of silicon with minimum defects and reduce processing time for the final stage of polishing towards manufacturing ultra-smooth and planer surfaces.

Erosion Mechanisms of Monocrystalline Silicon under A Microparticle Laden Air Jet

Material removal mechanisms of monocrystalline silicon under the impact of high velocity micro-particles

A Study on Erosion Performance of Monocrystalline Silicon in Ultrasonic Vibration-Assisted Abrasive Water Jet Machining

Solid particle erosion-wear behaviour of SiC particle-reinforced Si matrix composite and neat Si—A comparison

An Investigation on the Monocrystalline Silicon Surface Damage Caused by Slurry Erosion

Surface and Subsurface Integrity of Monocrystalline Silicon in Impulse-Discharge Driven Abrasive Machining

Influences of the Viscosity of Slurry on Monocrystalline Silicon Surface Damage Caused by Nanoparticle Impact

Modeling and optimizing of laser-assisted waterjet process parameters for near-damage-free micromachining of monocrystalline silicon

Influence of Abrasive Shape on the Abrasion and Phase Transformation of Monocrystalline Silicon

Monoatomic Layer Removal Mechanism in Chemical Mechanical Polishing Process: A Molecular Dynamics Study

Single Crystal Silicon: Surface Evolution Regularity of Chemical Etching and Effect of Nano Jet Polishing on Damage Precursor

Influence Of Normal Load On The Three-Body Abrasion Behaviour Of Monocrystalline Silicon With Ellipsoidal Particle

Mechanism of surface modification on monocrystalline silicon during diamond polishing at nanometric scale

Atomic scale deformation in the solid surface induced by nanoparticle impacts

Role of mechanically-driven distorted microstructure in mechanochemical removal of silicon

Surface Topography and Subsurface Structure Evolution in Laser Micro Polishing of Monocrystalline Silicon

Mechanical effect of abrasives on silicon surface in chemo-mechanical grinding

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Atomistic understanding of the subsurface damage mechanism of silicon (100) during the secondary nano-scratching processing

Study on the Vertical Ultrasonic Vibration-Assisted Nanomachining Process on Single-Crystal Silicon

Morphology and Roughness on Silicon Surface During Low Energy Ion Beam Erosion