Abstract:Hydrogenated amorphous silicon carbide thin films (a-SiC:H) were prepared by plasma-enhanced chemical vapor deposition (PECVD) and thermal annealed at temperatures of 900, 1050, and 1200°C, respectively. The influence of annealing temperature on the silicon quantum dot (QD) synthesis was investigated by Raman scattering spectroscopy, X-ray diffraction spectroscopy, and high-resolution transmission electron microscopy. The influence of annealing temperature on the chemical bonding configurations was revealed by Fourier transform infrared absorption microscopy. The element ratios of the as-deposited sample were deduced by X-ray photoelectron spectroscopy. Results reveal that the samples are in silicon-rich nature. Silicon in the as-deposited sample and the 900°C annealed sample are amorphous. When the annealing temperature is increased to 1050°C, crystal silicon QDs have come into being. The calculated number density is about 2.15±0.03×1012cm−2 and more than 80±3% of the silicon QDs fall within a narrow size range of 2–3nm. When the annealing temperature is increased to 1200°C, the average size of crystal silicon QDs is tuned from 2.6 to 3.2nm, while the crystallinity is enhanced from 56.7±2.5 to 67.1±1.5%. We attribute the influence of annealing temperature on the synthesis of silicon QDs to be dependent on the evolution of chemical bonding configurations and the agglomeration of silicon atoms from the host matrix.

Au-induced Crystallization of Hydrogenated Amorphous Si1−xGex (0.2 ≤ X ≤ 1) Thin Films with Chemical Source at Low Temperature

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Dopant Activation In Poly-Si1-Xgex At Low Temperature

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au, Ge/Ag BILAYER FILMS AND Ge-Au, Ge-Ag ALLOY FILMS

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

Isochronal and Isothermal Annealing Effects on Si1-xGex Thin Film by Ion Beam Sputtering

Ni Induced Crystallization of Amorphous SiGe

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

The influence of annealing temperature on the synthesis of silicon quantum dots embedded in hydrogenated amorphous Si-rich silicon carbide matrix

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments