Abstract:Material crystallinity is paramount in determining the photoelectric performances and device applications. Moreover, a high-quality crystalline layer, especially a multilayer film or a heteroepitaxial film, is continuously explored to cater for low defect density and ultrahigh structure integrity as well as low cost, yet is challenging. In this study, the crystallization effect of Ge/Si heteroepitaxial nanofilms (<100 nm) is investigated in detail to pursue low crystallization temperature and the underlying mechanism. It is demonstrated that the crystallinity and the crystallographic orientation of the underlying layer can tune the crystallization behavior of the upper-layer film. This interfacial inducing effect on crystallization originating from the buffer layer is verified on inversed architecture of the Si/Ge film and is proposed to be the microcrystal-induced crystallization (MIC) effect. Based on a point-defect model describing an order/disorder microcrystal structure, the MIC effect is flexibly supported by the results of binding energy and charge transfer via first-principles calculations for the first time. This work also provides a facile strategy and theoretical support to prepare high-crystalline multilayer films or intact crystals for urgent microelectronics and optoelectronics applications.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00373.Ge–Ge peak fitting and crystallinity of the Ge/a-Si specimen in Raman spectra, AFM images of samples prepared at different conditions, Raman spectra of different samples, crystallinity trend and the graph of root-mean-square (RMS) surface roughness, XRD spectra and the X-ray diffraction data of the 300 nm Ge film, unoptimized atomic structures of Ge microcrystalline, optimized atomic structures and differential charge densities, and specific values of binding energy and charge transfer (PDF)This article has not yet been cited by other publications.

CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au, Ge/Ag BILAYER FILMS AND Ge-Au, Ge-Ag ALLOY FILMS

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

Effect of Stacking Sequence on Crystallization in Al/a-Ge Bilayer Thin Films

Crystallization of amorphous N‐doped Ge‐rich GST layers deposited on a polycrystalline GST template

Effect of Fractal Crystallization on the Depositing Sequence of A Pd/Ge Thin Film System

Atomic-scale in situ observation of electron beam and heat induced crystallization of Ge nanoparticles and transformation of Ag@Ge core-shell nanocrystals

Crystallization kinetics from Ge-rich Ge–Sb–Te thin films: Influence of thickness

Characterization and Mechanism of Crystallization of Ge Films on Silicon Substrate with Graphite Buffer Layer

Crystallization Kinetics of Amorphous Alloys Fe_(73.5)Si_(13.5-x)Ge_xB_9Cu_1Nb_3(x=3, 6)

Microcrystal-Induced Crystallization Effect for High-Quality Germanium/Silicon Heteroepitaxial Nanofilms

Experimental Demonstration Of The Role Of Local Latent-Heat In Ge Pattern-Formation

Multifractal Behavior of Crystallization on Au/Ge Bilayer Films

Crystallization of Bulk Amorphous Alloy (Fe40ni40p14b6)(96)ga-4 in Supercooled Liquid Region

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Explosive crystallization of amorphous germanium-tin films by irradiation with a 3-keV electron beam

The Alloying Effects of Ge and Si on Thermal Stability and Crystallization Behavior of Al-Y Binary Amorphous Alloys

Dependence of Fractal Formation on Thickness Ratio and Annealing Time in Au/Ge Bilayer Films

In Situ AFM and Raman Spectroscopy Study of the Crystallization Behavior of Ge2Sb2Te5 Films at Different Temperature

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Theoretical explanation of different crystallization processes between as-deposited and melt-quenched amorphous Ge2Sb2Te5 thin films