Abstract:GeSbTe (GST) thin films were deposited on quartz substrates using electron beam evaporation system and then annealed in nitrogen atmosphere at different temperatures, ranging from 20 degrees C to 300 degrees C. Xray diffraction (XRD) and Atomic Force microscope (AFM) measurements were used to characterize the as-deposited and post-annealed thin films. Annealing treatment was found to induce changes on microstructure, surface roughness and grain size, indicating that with the increase of annealing temperature, the amorphous GST films first changed to face-centered-cubic (fcc) phase and then the stable hexagonal (hex) phase.Meanwhile, conductive-AFM (C-AFM) was used to produce crystallized GST dots on thin films. I-V spectroscopy results show that GST films can switch from amorphous state to crystalline state at threshold voltage. After switching, I-V curve exhibits ohmic characteristic, which is usually observed in crystallized GST films. By applying repeated I-V spectroscopies on the thin films, crystallized nuclei were observed. As the times of I-V spectroscopies increases, the area of written dots increases, and the center of the mark begin to ablate. The AFM images show that the shape of marks is an ablated center with a raised ring surrounding it. (C) 2012 Elsevier B.V. All rights reserved.

Experimental Demonstration Of The Role Of Local Latent-Heat In Ge Pattern-Formation

Effect of grain boundary network on pattern formation in a-Ge/Au bilayer films

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Experimental Demonstration Of Fractal Shape Transition And Fractal Size In Ge Clusters Formation

Dependence of Fractal Formation on Thickness Ratio and Annealing Time in Au/Ge Bilayer Films

Experimental observation and simulation of fractal patterns of Au/Ge bilayer films

CRYSTALLIZATION OF AMORPHOUS Ge IN Ge/Au, Ge/Ag BILAYER FILMS AND Ge-Au, Ge-Ag ALLOY FILMS

Multifractal Behavior of Crystallization on Au/Ge Bilayer Films

Effect of Fractal Crystallization on the Depositing Sequence of A Pd/Ge Thin Film System

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

In Situ Tem Study Of Fractal Formation In Amorphous Ge/Au Bilayer Films

Fractal Crystallization And Nonlinear V-I Behavior Of Au/Ge Bilayer Film

Fractal formation and tunnelling effects on the conductivity of Au/a-Ge bilayer films

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

Abnormal Morphology of Amorphous Germanium Films in Contact with Palladium

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Insights into Fractal Feature Evolution from Au/Ge Thin Films after Annealing

Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films

In situ transmission electron microscopy observations of the crystallization of amorphous Ge films

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films