Effect of Vacancy on Nucleation for Oxygen Precipitation in Conventional and Nitrogen-Doped Czochralski Silicon

Jiang Hanqin,Ma Xiangyang,Yang Deren,Que Duanlin
DOI: https://doi.org/10.3321/j.issn:0253-4177.2008.10.025
2008-01-01
Chinese Journal of Semiconductors
Abstract:The oxygen precipitation behaviors in conventional and nitrogen-doped Czochralski (NCZ) silicon subjected to the rapid thermal processing (RTP) at 1250℃ for 50s followed by the ramping anneal in different temperature intervals in the range from 600 to 1000℃ and isothermal annealing at 1000℃ are investigated. The results show that the RTP-induced vacancies enhance the nucleation of oxygen precipitates most significantly during the ramping anneal from 700 to 800℃ for conventional CZ silicon.Meanwhile,for NCZ silicon,the most significant vacancy-enhancement of nucleation of oxygen precipitates occurs during the ramping anneal from 800 to 900℃. Nitrogen is superior to vacancy for enhancement of oxygen precipitate nucleation at temperatures higher than 800℃. Furthermore,the internal gettering processes appropriate for CZ and NCZ silicon wafers based on the RTP and ramping anneal in the low temperature range are proposed.
What problem does this paper attempt to address?