Forming Process Investigation Of Cuxo Memory Films

H. B. Lv,M. Yin,Y. L. Song,X. F. Fu,L. Tang,P. Zhou,C. H. Zhao,T. A. Tang,B. A. Chen,Y. Y. Lin

DOI: https://doi.org/10.1109/LED.2007.911619

IF: 4.8157

2008-01-01

IEEE Electron Device Letters

Abstract:The forming process, which is the first transition from fresh state to low resistance state, was investigated in CuxO memory films prepared by plasma-induced oxidation. X-ray photoelectron spectroscopy investigation of surface chemical bonds of CuxO films and Auger electron spectroscopy depth spectra show that the formation of a highly resistive CuO layer on the CuxO surface is the main reason for the requirement of a large forming voltage. After selectively deoxidizing the CuO into Cu2O, the need for the "forming" process disappears.