Abstract:The switching characteristics of HfOx-based resistive switching random access memory (RRAM) fabricated on front-end of 28 nm standard CMOS process are investigated. The integration of RRAM in the front-end of the CMOS process would minimize the influence of parasitic parameters caused by interconnection line and interlayer oxide on the one transistor one RRAM (1T1R) cells. By adopting pulse program-verify measurement for cycling test, we observe two nonideal phenomena in the commercialized RRAM devices for the first time: 1) low resistance state (LRS) current periodically decays exponentially accompanied by incremental SET pulse number and then increases abruptly when the cycle reaches a certain level and 2) high resistance state (HRS) current fluctuated dramatically during RESET operation. The current fluctuation is mainly due to the generation of new oxygen vacancies (Vos) near the bottom electrode and gap region by electrons trapping/detrapping. By adopting efficient pulse amplitude modulation, the optimized programming strategy has greatly reduced the switching instability and improved the endurance of the devices. Mechanisms of the instability and the optimization strategy are explained by a modified trap-assisted tunneling (TAT) model based on the generation and redistribution of Vos during cycling operations.

Improvement Of Endurance And Switching Stability Of Forming-Free Cuxo Rram

Enhancement Of Endurance For Cuxo Based Rram Cell

Performance Improvement of CuOx RRAM for Non-volatile Applications

Forming-Free HfOx-Based Resistive Memory with Improved Uniformity Achieved by the Thermal Annealing-Induced Self-Doping of Ge

Improvement of Resistive Switching in $\hbox{Cu}_{x} \hbox{O}$ Using New RESET Mode

Improvement of Resistive Switching in <formula formulatype="inline"><tex Notation="TeX">$\hbox{Cu}_{x} \hbox{O}$</tex></formula> Using New RESET Mode

Improvement of endurance degradation for oxide based resistive switching memory devices correlated with oxygen vacancy accumulation effect

Influences of Cu Doping on the Microstructure, Optical and Resistance Switching Properties of Zinc OxideThin Films

Performance Improvement of CuOx with Gradual Oxygen Concentration for Nonvolatile Memory Application

Material Engineering Technique for Siox-Based Embedded Rram with Cmos Compatible Process

Endurance Enhancement Of Cu-Oxide Based Resistive Switching Memory With Al Top Electrode

Different Interface Role in Cuox Based Rram

A Systematic Investigation of TiN/CuxO/Cu RRAM with Long Retention and Excellent Thermal Stability

Study Of One Dimension Thickness Scaling On Cu/Hfox/Pt Based Rram Device Performance

Structural phase transition and resistive switching properties of CuxO films during post-thermal annealing

Programming Strategy Optimization of RRAM Fabricated by 28 nm Standard CMOS Process

Forming Process Investigation Of Cuxo Memory Films

Oxide-Based Rram: Uniformity Improvement Using A New Material-Oriented Methodology

A Self-Rectifying and Forming-Free HfOx Based-High Performance Unipolar RRAM

Analytic Model Of Endurance Degradation And Its Practical Applications For Operation Scheme Optimization In Metal Oxide Based Rram

Novel Vertical 3D Structure of TaO X -Based RRAM with Self-localized Switching Region by Sidewall Electrode Oxidation