Abstract:Ferroelectric random access memory (FeRAM) is believed to be the most promising candidate for the next generation non-volatile memory due to its fast access time and low power consumption. Fabrication technologies of FeRAM can be divided into two parts: CMOS technologies for circuits which are standard and can be shared with traditional IC process line, and process relating to ferroelectric which is separated with CMOS process and defined as backend module. This paper described technologies for integrating ferroelectric capacitors into standard CMOS, mainly about modeling of ferroelectric capacitors and backend fabrication technologies. Hysteresis loop of the ferroelectric capacitor is the basis for FeRAM to store data. Models to describe this characteristic are the key for the design of FeRAM. A transient behavioral ferroelectric capacitor model based on C-V relation for circuit simulation is developed. The arc tangent function is used to describe the hysteresis loop. “Negative capacitance” phenomenon at reversing points of applied voltage is analyzed and introduced to the model to describe transient behaviors of the capacitor. Compact equivalent circuits are introduced to integrate this model into HSPICE for circuit simulation. Ferroelectric materials fabrication, electrodes integration and etching are the main technologies of FeRAM fabrication process. An metal organic chemical vapor deposition (MOCVD) process is developed to fabricate high quality Pb(Zr1-xTix)O3 (PZT) films. Pt is known to cause the fatigue problems when used as electrodes with PZT. Ir is used as electrodes to improve the fatigue property of PZT based capacitors, and mechanism of the fatigue is analyzed. Hard mask is used to reduce the size of the capacitors and damage caused in etching process. In our process, Al2O3 is developed as hard mask, which simplifies the FeRAM backend integration process.

Modeling And Analysis Of Effect On Bit-Line Voltage Caused By Imprint In Feram

Preisach modeling of imprint on hafnium zirconium oxide ferroelectric capacitors

Modeling of Endurance Degradation of Anti-Ferroelectric HF1-xZRxO2 Capacitors

Interval time dependent wake-up effect of HfZrO ferroelectric capacitor

Microscopic mechanism of imprint in hafnium oxide-based ferroelectrics

On the relationship between imprint and reliability in Hf 0.5 Zr 0.5 O 2 based ferroelectric random access memory

Imprint Behavior Investigation of the Pb(Zr,Ti)O3 Ferrelectric Thin Films

A New Ferroelectric Capacitor Model and Its Application in 1T/1C FeRAM

An Improved Behavioral Model of Ferroelectric Capacitors

Imprint effect in ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin films

Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

An Improved Macro Model of Ferroelectric Capacitor for FeRAM Design

Model and key fabrication technologies for FeRAM

Graphic Solution and Analysis of Voltage Distribution Between Ferroelectric Capacitor/Capacitors and Bitline Capacitance

Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors

The Performance of FRAM Integrated With 3D Trench Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> Ferroelectric Capacitor

Understanding of polarization reversal and charge trapping under imprint in HfO2-FeFET by charge component analysis

Temperature effects on the performance of ferroelectric FET with random grain phase variation for non-volatile memory application

Unravelling and controlling hidden imprint fields in ferroelectric capacitors

A Novel Circuit Scheme And Analysis For Three-Level Feram

Key Technologies for Feram Backend Module