Low Loss Sharp Bend for Silicon Nanophotonic Slow-Light Waveguide

Huaidang Yi,Yi Wang,Junbo Feng,Yao Chen,Zhiping Zhou

DOI: https://doi.org/10.1109/group4.2008.4638180

2008-01-01

Abstract:A low loss sharp bend is proposed and analyzed in the slow-light waveguide which is consisted of a series of silicon nanopillars. More than 90% of transmission over 100nm bandwidth is obtained.

What problem does this paper attempt to address?

Waveguide Bends from Nanometric Silica Wires

LM Tong,IY Lou,E Mazur

DOI: https://doi.org/10.1117/12.575598

2005-01-01

Abstract:We propose to use bent silica wires with nanometric diameters to guide light as optical waveguide bend. We bend silica wires with scanning tunneling microscope probes under an optical microscope, and wire bends with bending radius smaller than 5 mu m are obtained. Light from a He-Ne laser is launched into and guided through the wire bends, measured bending loss of a single bend is on the order of 1 dB. Brief introductions to the optical wave guiding and elastic bending properties of silica wires are also provided. Comparing with waveguide bends based on photonic bandgap structures, the waveguide bends from silica nanometric wires show advantages of simple structure, small overall size, easy fabrication and wide useful spectral range, which make them potentially useful in the miniaturization of photonic devices.
Loss Reduction in Sharply Bent Optical Nanofibers by Coupling with Au Nanoparticles

Yuxin Yang,Jue Gong,Yixiao Gao,Xin Guo,Pan Wang,Limin Tong

DOI: https://doi.org/10.1016/j.optcom.2021.127167

IF: 2.4

2021-01-01

Optics Communications

Abstract:Bending losses of sharply bent optical nanofibers or nanowires coupling with Au nanoparticles (Au NPs) are investigated using a finite-difference time-domain (FDTD) method. Relying on the ultra-tight optical confinement of the Au NPs, bending losses of the sharply bent optical nanofibers or nanowires can be effectively reduced by attaching Au NPs to the inner edge of the bent nanofibers or nanowires. At 650-nm wavelength, a bending-loss reduction of 4.7 dB/90° is obtained for a 300-nm-diameter SiO2 nanofiber coupling with seven 140-nm-diameter Au NPs when the bending radius is 1.0 μm. Our results suggest a potential route to realizing sharply-bent optical nanofibers or nanowires with acceptable bending losses for constructing highly compact photonic integrated circuits or devices.
Ultralow-loss Compact Silicon Photonic Waveguide Spirals

Shihan Hong,Long Zhang,Yi Wang,Ming Zhang,Yiwei Xie,Daoxin Dai

DOI: https://doi.org/10.1364/acpc.2021.t1d.3

2021-01-01

Abstract:We propose and demonstrate a novel silicon photonic spiral with a tapered-Euler-S-bend. A 100-cm-long waveguide spiral is realized with a bending radius as small as 10 μm, while the measured propagation loss is as low as 0.28 dB/cm.
Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Bowei Dong,Xin Guo,Chong Pei Ho,Bo Li,Hong Wang,Chengkuo Lee,Xianshu Luo,Guo-Qiang Lo

DOI: https://doi.org/10.1109/jphot.2017.2692039

IF: 2.4

2017-01-01

IEEE Photonics Journal

Abstract:In this paper, we demonstrate silicon-on-insulator (SOI) channel waveguides with propagation loss and $r$ = 10 $\mu$$\text{m}$ bends with bending loss as low as 2 dB/cm and 0.02 dB/90 $^{\circ }$ in the broad wavelength range of 3.68–3.88 $\mu$ $\text{m}$. We also indicate the limitation of SOI waveguide loss in mid-infrared wavelength by analyzing loss mechanisms. Based on this high-performance mid-infrared waveguide, we systematically analyze the coupling efficiency of various directional couplers, which are critical and commonly used building blocks for on-chip light routing and power splitting. By varying coupling length and sweeping wavelength, the performance of directional coupler with various gap separations is meticulously investigated in 3.68–3.88 $\mu$ $\text{m}$. A experimental database for directional coupler with any power splitting ratio is provided. Our results offer a promising broadband platform for dense wavelength division multiplexing (DWDM) and applications that require precise control of coupling such as racetrack resonator in the mid-infrared region.
Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

xiangdong li,xue feng,xian xiao,yihang li,kaiyu cui,fang liu,yidong huang

DOI: https://doi.org/10.1109/LPT.2015.2478900

IF: 2.6

2016-01-01

IEEE Photonics Technology Letters

Abstract:Silicon slot waveguides operating at a wavelength of high silicon absorption are fabricated on silicon-on-insulator wafers. The measured transmission loss coefficient is as low as 6 similar to 8 dB/cm at 1064 nm, which is much lower than the material absorption. In addition, the bending loss of the slot waveguides is measured as 4.1 similar to 4.6 dB/180 degrees with a bending radius of 15 mu m. Both the transmission and bending losses are analyzed and discussed. We believe that this work could pave the way to achieve all-silicon photonic integrated circuits, which are very promising for a future on-chip chemical/biological analysis.
Ultra Sharp Curved Waveguide Design Based on Topology Optimization

Xiao-Bin Lin,Hong-Tao Lin,Er-Ping Li

DOI: https://doi.org/10.1109/icmmt52847.2021.9618364

2021-01-01

Abstract:This paper presents a topology optimization design method to achieve the inverse design for nanophotonics device. In this paper, we use the direct binary search algorithm (DBS) for inverse design and propose a 90° curved waveguide with an ultra-small bending radius (inner radius, r < 0.1λ0). The transmission rate exceeds 90% in 1380~1465nm, which nearly 10% higher than the traditional design. Furthermore, we design a compact all-optical XOR logic gate in the same method. All designs are compatible with the standard process, which laid the foundation for the development of optical computing and optical neural networks.
Compact Low-Loss Adiabatic Bends in Silicon Shallow-Etched Waveguides

Xin Tu,Ming Li,Jia Jiang,Dominic Goodwill,Patrick Dumais,Eric Bernier,Hongyan Fu,Dongyu Geng

DOI: https://doi.org/10.1109/group4.2016.7739046

2016-01-01

Abstract:We report an adiabatic bend based on silicon shallow-etched waveguide using a sine-circle-sine design. The loss per 180° turn is 0.05 dB for 5 μm bend and 0.008 dB 10 μm bend for TE polarization, which are significantly lower than that of a circular bend.
Waveguides Used for Nano- Photonic Circuits

Hong‐Son Chu,Ping Bai,Er‐Ping Li

2011-01-01

Abstract:Key challenge in the design of plasmonic nano waveguide is to simultaneously achieve high confinement and low propagation loss. This paper presents that a planar hybrid dielectric-loade d plasmonic nano-waveguide (HDLW) could be a promising candidate to build high-performance plasmonic components. Our studies show that the HDLW can achieve better trade-off between the field intensity confinement and the propagation length than a metal-insulator- metal nanoslot waveguide does. Consequently, a 90°-circular bend built with the HDLW can achieve a total loss of 0.3 dB with a small bending radius of 2J.1m. A ring resonator formed with the HDLW shows the excellent performance: with a ring radius of 5 J.1m, this resonator exhibits a large free spectral range (22 nm), a narrow bandwidth (4 nm), and high extinction ration (20 dB). The superior performance of these plasmonic components makes them promising building blocks for nanophotonic integrated circuits.
Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

X. Zhang,S. Gao,S. He

DOI: https://doi.org/10.2528/pier08120601

2009-01-01

Abstract:The broadband wavelength conversion based on four-wave mixing in a silicon nanowire waveguide is theoretically investigated by taking into account the influence of the waveguide loss and free-carrier absorption on the phase-matched condition. The lossy wavelength conversion is compared with the lossless one in terms of conversion efficiency and bandwidth. The size of the silicon-on- insulator nanowire waveguide is optimized to be 400 nm × 269 nm for broadband wavelength conversion by realizing a flattened dispersion. The pump wavelength is also optimized to 1538.7 nm in order to further enhance the conversion bandwidth. A 3-dB conversion bandwidth of over 280 nm is achieved in the optimized waveguide with the optimized pump wavelength.
Low Loss Sharp Photonic Crystal Waveguide Bends

Qiang Zhao,Kaiyu Cui,Xue Feng,Fang Liu,Wei Zhang,Yidong Huang

DOI: https://doi.org/10.1016/j.optcom.2015.06.001

IF: 2.4

2015-01-01

Optics Communications

Abstract:In this paper we study slot structures in the 120° photonic crystal waveguide (PCW) bends. We find that the transmission characteristics of the slotted PCW bend can be simply predicted by analyzing the corresponding straight PCW. According to our mode analysis for straight PCW, the slot structure blue shifts the stopband of the fundamental mode, while enhances the light confinement at slot side. The experiment shows good agreements with the simulation. Furthermore, a low bending loss in broad bandwidth has been obtained in the capsule-shaped slot PCW bend, which is very useful for broadband application.
Low-Loss Plasmonic Slow Light Waveguide

Bo Han,Xiaohong Jiang,Yang Qu,Chun Jiang

DOI: https://doi.org/10.1109/inow.2007.4302955

2007-01-01

Abstract:We propose a novel SP-based guiding mechanism to address the following issues simultaneously: confining the light in subwavelength-size regions, showing broadband slow group velocity and lowering the intrinsic loss of the metallic structure.
Subwavelength Silica-Based Optical Waveguide with a Multilayered Buffer for Sharp Bending

Daoxin Dai

DOI: https://doi.org/10.1109/jlt.2008.2011501

IF: 4.7

2009-01-01

Journal of Lightwave Technology

Abstract:A subwavelength SiO2-based optical waveguide with an air cladding and a multilayered buffer is presented. This multilayered buffer includes alternating low and high refractive index dielectric layers. The thicknesses of these dielectric layers are chosen optimally by using genetic algorithm so that the theoretical leakage loss of the present optical waveguide is minimized (<0.001 dB/mm at the central wavelength, e.g., 1550 nm). The modal analysis with a full-vectorial finite-difference method shows that the present SiO2 optical waveguide has the ability of sharp bending with a very small bending radius (~ 10 mum).
Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Zhihua Tu,Qiang Jin,Xibin Li,Shiming Gao

DOI: https://doi.org/10.1364/josab.35.001772

2018-01-01

Abstract:Mid-infrared (MIR) integrated waveguides with strong local field enhancement and relatively low loss have shown their potential in nonlinear optical applications. We present a novel highly nonlinear silicon hybrid waveguide by setting an insulator-metal-insulator structure with [2-[4-(dimethylamino)phenyl]-3-([4-(dimethylamino)phenyl]ethynyl)buta-1,3-diene-1,1,4,4-tetracarbonitrile] (DDMEBT) and silver materials into the silicon slot. The mode field is strongly confined in the DDMEBT layers via the surface plasmon polariton effect. Two rectangular silicon nanobridges are used to further confine the optical field and reduce the loss simultaneously. The waveguide dimensions are optimized to obtain a figure of merit as high as 0.55 at 2.1 mu m and a zero-dispersion wavelength of 2.06 mu m. In a 6.6-mm-long waveguide, a maximum four-wave mixing efficiency of -6.65 dB and a bandwidth of 512 nm (1.894-2.406 mu m) can be simultaneously obtained, pumped by a 2.104-mu m source with a power of only 500 mW. Our designed waveguide exhibits excellent overall performance for nonlinear optical applications such as all-optical signal processing in the MIR band. (C) 2018 Optical Society of America
Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Wei Li,P. Anantha,Shuyu Bao,Kwang Hong Lee,Xin Guo,Hong Wang,Richard Soref,Chuan Seng Tan

DOI: https://doi.org/10.1109/group4.2016.7739061

2016-01-01

Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.
Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Xiangdong Li,Xue Feng,Yidong Huang

DOI: https://doi.org/10.1364/acpc.2015.asu1b.5

2015-01-01

Abstract:Silicon slot waveguide operating at 1064 nm is experimentally demonstrated. The transmission loss and bending loss are measured as 6.0 dB/cm and 4.1 dB/180°. Tunable slot micro-ring with Q factor of 3400 is fabricated.
Transmission of Slow Light through Photonic Crystal Waveguide Bends

Solomon Assefa,Sharee J. McNab,Yurii A. Vlasov

DOI: https://doi.org/10.1364/OL.31.000745

2005-10-15

Abstract:The spectral dependence of a bending loss of cascaded 60-degree bends in photonic crystal (PhC) waveguides is explored in a slab-type silicon-on-insulator system. Ultra-low bending loss of (0.05+/-0.03)dB/bend is measured at wavelengths corresponding to the nearly dispersionless transmission regime. In contrast, the PhC bend is found to become completely opaque for wavelengths range corresponding to the slow light regime. A general strategy is presented and experimentally verified to optimize the bend design for improved slow light transmission.

Optics
SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Jia Xu Brian Sia,Wanjun Wang,Xin Guo,Jin Zhou,Zecen Zhang,Xiang Li,Zhong Liang Qiao,Chong Yang Liu,Callum Littlejohns,Graham T. Reed,Hong Wang

DOI: https://doi.org/10.1109/jphot.2019.2952603

IF: 2.4

2019-01-01

IEEE Photonics Journal

Abstract:Silicon photonics at the 2 μm waveband, specifically the 1.9 μm wavelength region is strategically imperative. This is due to its infrastructural compatibility (i.e., thulium-doped fiber amplifier, hollow-core photonic bandgap fiber) in enabling communications, as well as its potential to enable a wide range of applications. While the conventional Silicon-on-Insulator platform permits passive/active functionalities, it requires stringent processing due to high-index contrast. On the other hand, SiN can serve to reduce waveguiding losses via its moderate-index contrast. In this work, by demonstrating SiN passives and Si-SiN interlayer coupler with favorable performance, we extend the Si-SiN platform to the 1.9 μm wavelength region. We report waveguide propagation loss of 2.32 dB/cm. Following, trends in radiation loss with regards to bending radius is analyzed. A high performance 3-dB power splitter with insertion loss and bandwidth of 0.05 dB and 55 nm (1935--1990 nm) respectively is introduced. Lastly, Si-SiN transition loss as low as 0.04 dB is demonstrated.
Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Lin Han,Xiaoke Ruan,Weijie Tang,Tao Chu

DOI: https://doi.org/10.1364/oe.451104

IF: 3.8

2022-01-01

Optics Express

Abstract:An ultralow-loss silicon planar waveguide crossing operating in the O-band was experimentally demonstrated based on the Gaussian beam synthesis method. Elliptical parabolic inverted tapers were introduced in our design to reduce the crossing loss. According to the measurement results, the proposed device exhibits an insertion loss of 0.008 dB, which is the lowest reported loss for planar silicon waveguide crossings operating in the O-band. The device exhibits a low crosstalk below -40 dB over a 40 nm wavelength range with a compact footprint of 18 × 18 µm2 and can be fabricated in a complementary metal-oxide-semiconductor-compatible process.
Analysis of 90° bend photonic crystal waveguide: an application to optical interconnect

Partha Sarkar,Abinash Panda,G. Palai

DOI: https://doi.org/10.1007/s12648-019-01425-7

2019-03-27

Indian Journal of Physics

Abstract:In this research, we propose and analyse a two-dimensional photonic crystal having L-shaped bend waveguide to realise a negligible bending loss, nonlinearity and confinement loss at the signal of 1.31 μm and 1.55 μm. The proposed waveguide comprises 9 × 9 circular dielectric rods of silicon with air as background material. Further, finite-difference time-domain method is employed for analysing electric field distribution in order to realise effective area as well as high transmission characteristics of the proposed waveguide. Moreover, numerical formulations are used for simulation of bending loss, nonlinearity and confinement loss in the waveguide with suitable structure parameters (diameter of circular rods, nature of the material, lattice spacing). Again, simulation results revealed that ultra-low bending loss of 0.72 × 10−7 dB/m and 0.93 × 10−7 dB/m is experienced by the waveguide at wavelengths 1.31 μm and 1.55 μm, respectively, for 10 nm diameter of the circular rod, whereas a feeble nonlinearity of 0.085 W−1 km−1 and 0.072 W−1 km−1 is also asserted in the same. Furthermore, simulation outcomes proclaimed a negligible confinement loss of 5.7 × 10−11 and 4.8 × 10−11 for the said wavelengths. Finally, this article discloses that the projected silicon-based photonic crystal waveguide appears to be an apt candidate as optical interconnects for application in photonic integrated circuits.

physics, multidisciplinary
Deeply Etched $\hbox{sio}_{2}$ Ridge Waveguide for Sharp Bends

Daoxin Dai,Yaocheng Shi

DOI: https://doi.org/10.1109/jlt.2006.885243

IF: 4.7

2006-01-01

Journal of Lightwave Technology

Abstract:A deeply etched SiO 2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO 2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mum) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections

Low Loss Sharp Bend for Silicon Nanophotonic Slow-Light Waveguide

Waveguide Bends from Nanometric Silica Wires

Loss Reduction in Sharply Bent Optical Nanofibers by Coupling with Au Nanoparticles

Ultralow-loss Compact Silicon Photonic Waveguide Spirals

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Silicon Slot Waveguides With Low Transmission and Bending Losses at 1064 nm

Ultra Sharp Curved Waveguide Design Based on Topology Optimization

Compact Low-Loss Adiabatic Bends in Silicon Shallow-Etched Waveguides

Waveguides Used for Nano- Photonic Circuits

Optimal Design of a Silicon-on-insulator Nanowire Waveguide for Broadband Wavelength Conversion

Low Loss Sharp Photonic Crystal Waveguide Bends

Low-Loss Plasmonic Slow Light Waveguide

Subwavelength Silica-Based Optical Waveguide with a Multilayered Buffer for Sharp Bending

Mid-infrared Nonlinear Silicon Hybrid Waveguide with High Figure of Merit

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Silicon Slot Waveguide with Low Transmission and Bending Loss at ~ 1 Μm

Transmission of Slow Light through Photonic Crystal Waveguide Bends

SiN-SOI Multilayer Platform for Prospective Applications at 2 Μm

Ultralow-loss Waveguide Crossing for Photonic Integrated Circuits by Using Inverted Tapers

Analysis of 90° bend photonic crystal waveguide: an application to optical interconnect

Deeply Etched $\hbox{sio}_{2}$ Ridge Waveguide for Sharp Bends