Abstract:Recently, solid state white lighting, optical data storage and biochemical identification applications have led to a tremendous surge in research aimed at developing high power violet and ultraviolet light emitting diodes(V-LEDs and UV-LEDs). The white LEDs have come to be expected for use in lighting, which consists of a blue LEDs and yellow phosphor or an violet (or UV) LED and red-green-blue phosphors, but conversion efficiency and chromaticity of white LED with violet (or UV) LED were better than that with blue LEDs. Although high-brightness blue LEDs have been realized, high-power violet (or UV) LEDs have not yet been realized due to the high dislocation density. One possible reason for this is considered as the suppression of non-radiative recombination center in In xGa 1-xN active layers. It is known for violet (or UV) LEDs that the addition of a small amount of In to GaN active layer results in the improvement of emission wavelength and efficiency. Recently, the epitaxial lateral overgrowth (ELOG) is effective in reducing the dislocation density, so it can be used to fabricate high-power violet (or UV) LED. Violet-LEDs with InGaN/GaN multi-quantum-wells (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The double crystal X-ray diffraction revealed distinct second order satellite peaks. The emitting peak of PL spectra is at 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with forward voltage about 4V at 20mA injection current.

Study of Optical Characteristics of InGaN/GaN MQW LED Depended on Growth Temperature

InGaN/GaN MQW High Brightness LED Grown by MOCVD

Optical and Electronic Properties of InGaN/GaN Multi-Quantum-Wells Near-Ultraviolet Lighting-Emitting-Diodes Grown by Low-Pressure Metalorganic Vapour Phase Epitaxy

Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures

Study of temperature-dependent electroluminescence in the high-power blue InGaN/GaN multiple quantum wells light-emitting diodes

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

InGaN/GaN MQW Violet-LED Grown by LP-MOCVD

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Growth of high-quality near-ultraviolet light-emitting diodes used InGaN/GaN multiple quantum wells

Temperature Dependent Growth of InGaN/GaN Single Quantum Well

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes

Structrual and Optical Properties Research of the InGaN/GaN MQW Emiting Red-Orange

Emission Efficiency Enhanced by Introduction of the Homogeneous Localization States in InGaN/GaN Multiple Quantum Well LEDs

Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties

Structural and Optical Properties of InGaN/GaN Multiple Quantum Wells Structure for Ultraviolet Emission

Effect of in Incorporation Parameters on the Electroluminescence of Blue–violet InGaN/GaN Multiple Quantum Wells Grown by Metalorganic Chemical Vapor Deposition

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

Temperature Dependence of Polarized Electroluminescence Side Emission from (0001)-Oriented Blue and Violet InGaN∕GaN Light-Emitting Diodes

Study on Growth and Luminescence Properties of the Blue LED InGaN Active Layer

Time-resolved and Temperature-Varied Photoluminescence Studies of InGaN/GaN Multiple Quantum Well Structures