Abstract:A deep understanding of distinct functional differences of various defects in semiconductor materials is conducive to effectively control and rationally tune defect-induced functionalities. However, such research goals remain a substantial challenge due to great difficulties in identifying the defect types and distinguishing their own roles, especially when various defects coexist in bulk or nanoscale material. Hereby, we subtly selected a molecular-type semiconductor material as structural mode composed of supertetrahedral chalcogenide Cd-In-S nanoclusters (NCs) with intrinsic vacancy point defect at the core site and antisite point defects at the surface of supertetrahedron and successfully established the correlation of those point defects with their own electrochemiluminescence (ECL) behaviors. The multi-channel ECL properties were recorded, and the corresponding reaction mechanisms were also proposed. The predominant radiation recombination path of ECL emission peak at 585 nm was significantly distinguished from asymmetrically broad PL emission with a peak at 490 nm. In addition, the ECL performance of the coreless supertetrahedral chalcogenide nanocluster can be modulated by atomically precise doping of monomanganese ion at the core vacant site. A relatively high ECL efficiency of 2.1% was also gained. Actually, this is the first investigation of ECL behavior of semiconductor materials based on supertetrahedral chalcogenide nanoduster in aqueous solution. Current research may open up a new avenue to probe the roles of various different defects with defined composition and position in the NC. The versatile and bright ECL properties of Cd-In-S-NC combined with tunable ECL potential and ECL peak suggest that the new kind of NC-based ECL material may hold great promising for its potential applications in electrochemical analysis, sensing and imaging.

Transient Demonstration of Exciton Behaviours in Solid State Cathodoluminescence under Different Driving Voltage

Experimental Study of Low-Voltage -Driven Thin Film Electroluminescence Mechanism

Experimental study of excitation efficiency distribution in low-voltage-driven thin film electroluminescent devices

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Electrical Control of Excitonic Oscillator Strength and Spatial Distribution in a Monolayer Semiconductor

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Dislocation-related electroluminescence of silicon after electron irradiation

Dynamics of bound exciton complexes in CdS nanobelts.

Temperature Dependence of Sensitized Er3+ Luminescence in Silicon-Rich Oxynitride Films

Mixed Excitation in Electroluminesence

Scanning Cathodoluminescence Microscopy: Applications in Semiconductor and Metallic Nanostructures

Structural and Luminescent Properties of Electron-Irradiated Silicon

Current Driving Er-Doped Electroluminescence Devices With Long-Term Reliability

Electroluminescence Spectra Study of Au/Si/SiO2 Superlattice/p‐si Structures with Gamma Irradiation

Luminescence Studies of a Si/SiO2 Superlattice

Remote Lightening and Ultrafast Transition: Intrinsic Modulation of Exciton Spatiotemporal Dynamics in Monolayer MoS2.

Intrinsic "vacancy Point Defect" Induced Electrochemiluminescence from Coreless Supertetrahedral Chalcogenide Nanocluster.

Single charge and exciton dynamics probed by molecular-scale-induced electroluminescence

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Efficient cathodoluminescence of monolayer transitional metal dichalcogenides in a van der Waals heterostructure

Exciton-Related Photoluminescence and Lasing in Cds Nanobelts