Abstract:The problem of achieving high light extraction efficiency in Al-rich AlxGa1-xN is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich AlxGa1-xN alloy using the Heyd-Scuseria-Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew-Burke-Ernzerhof functional, in which the spin-orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich AlxGa1-xN. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN)(m)/(GaN)(n) (m>n) super-lattice (SL) substituting for Al-rich AlxGa1-xN disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p(x)- and p(y)-like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E perpendicular to c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN)(m)/(GaN)(n) SL is analyzed in depth.

Band Engineering In Al0.5ga0.5n/Gan Superlattice By Modulating Mg Dopant

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

Improving P-Type Doping Efficiency In Al0.83ga0.17n Alloy Substituted By Nanoscale (Aln)(5)/(Gan)(1) Superlattice With Mg-Ga-O-N Delta-Codoping: Role Of O-Atom In Gan Monolayer

Strain Modulation-Enhanced Mg Acceptor Activation Efficiency Of Al0.14ga0.86n/Gan Superlattices With Aln Interlayer

Improvement of P-Type Conductivity in Al-rich AlGaN Substituted by MgGa Δ-Doping (aln)m/(gan)n (m≥n) Superlattice

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

Enhanced Hole Transport in Mg-Doped Alxga1-Xn/Gan Superlattices by Strain and Period Modulations

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

Reducing Mg Acceptor Activation-Energy in Al 0.83 Ga 0.17 N Disorder Alloy Substituted by Nanoscale (AlN) 5 /(GaN) 1 Superlattice Using Mg Ga δ-Doping: Mg Local-Structure Effect

Design and Growth of P-Type AlGaN Graded Composition Superlattice

First-principles Calculation of AlN Electronic Structure by Doping with Mg and Zn

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Mg acceptors activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Subband Electron Properties Of Modulation-Doped Alxga1-Xn/Gan Heterostructures With Different Barrier Thicknesses

Properties of Mg-Doped AlGaN Films

Observation of 2D-magnesium-intercalated gallium nitride superlattices

Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (aln)m/(gan)n(m>n) Superlattice Substitution for Al-rich AlGaN Disorder Alloy: Ultra-Thin GaN Layer Modulation

Electronic structures and physical properties of Mg, C, and S doped g-GaN

Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic properties and atomic structure of Mg-doped multilayer g-GaN base on first-principles