Abstract:Ultrathin barrier AlN/GaN heterostructure with record low sheet resistance of 82 Ω sq−1 is achieved by molecular beam epitaxy, where Shubnikov‐de Haas oscillations (SdHOs) and quantum Hall effect (QHE) of two‐dimensional electron gas (2DEG) are observed. The fast Fourier transform analysis of the SdHOs demonstrates a three‐subband occupation in the triangle quantum well for the first time, with the electron density of n1 = 2.2 × 1013 cm−2, n2 = 2.3 × 1012 cm−2, and n3 = 8.8 × 1011 cm−2, respectively, and the corresponding energy of 265, 28, and 11 meV below Fermi level. The three‐subband QHE with a superposed feature is also demonstrated for the first time in AlN/GaN heterostructure, with large filling factors at high electron densities. By analyzing the first subband as the dominant part of the superposed QHE, the transport physics of a special magneto‐intersubband scattering is revealed. These results contribute to a better understanding of the quantum physics for 2DEG, leading to a versatile functionality for AlN/GaN devices.

Subband Electron Properties Of Modulation-Doped Alxga1-Xn/Gan Heterostructures With Different Barrier Thicknesses

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Study on the Subband Properties of Alx Ga1-x N/GaN Modulation-Doped Heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Multisubband Transport Of The Two-Dimensional Electron Gas In Alxga1-Xn/Gan Heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

Transport properties of the two-dimensional electron gas in Al xGa1-xN/GaN heterostructures

Transport Properties of Two-Dimensional Electron Gas in Different Subbands in Triangular Quantum Wells at AlxGa1−xN/GaN Heterointerfaces

Magnetotransport properties of two-dimensional electron gas in AlxGa(1-x)N/GaN heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Magnetotransport investigation of modulation-doped AlxGa1-xN/GaN heterostructures

Subbands Transport of the Two-Dimensional Electron Gas in AlxGa1−xN/GaN Heterostructures

Surface States in the Alxga1-Xn Barrier in Alxga1-Xn/Gan Heterostructures

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Magnetotransport Properties of High Equivalent Al Composition AlGaN/GaN Heterostructures Using AlN/GaN Superlattice As a Barrier

Influence of Strain Relaxation of the AlxGa1−xN Barrier on Transport Properties of the Two-Dimensional Electron Gas in Modulation-Doped AlxGa1−xN/GaN Heterostructures

MICROSTRUCTURES AND STRAIN RELAXATION IN MODULATION-DOPED <font>Al</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>N</font>/<font>GaN</font> HETEROSTRUCTURES

Transport properties of the two-dimensional electron gas in A/sub x/Ga/sub 1-x/N/GaN heterostructures

Three Subband Occupation of the Two‐Dimensional Electron Gas in Ultrathin Barrier AlN/GaN Heterostructures