Enhancement of Photoluminescence Emission in Low-Dimensional Structures Formed by Irradiation of Laser

Wei-Qi Huang,Li Xu,Ke-Yue Wu,Shi-Rong Liu
DOI: https://doi.org/10.1063/1.2778291
2008-01-01
Journal of Semiconductors
Abstract:We report the fabrication of low-dimensional structures by irradiation of a laser on the silicon sample and on the SiGe alloy sample. The physical mechanism forming a kind of hole-net structure of silicon could be explained with the theory of the harmonic standing wave of plasma. The article has studied the enhancement of the photoluminescence (PL) in the hole-net structure of silicon and in the porous structure of SiGe. The optimum condition in the preparing process is found to make a stable sample which has an intensive PL emission. The effect of the enhancement of the PL emission in the low-dimensional structures cannot be interpreted within the quantum confinement (QC) theory alone. So a model for explaining the effect is proposed in which the trap states of the interface between SiO2 and low-dimensional nanocrystal play an important role.
What problem does this paper attempt to address?