Abstract:Low emission efficiency of silicon (Si) based light emission devices (LED) still blocks application of Si-LED. Therefore, studies focusing on improving light emission of Si-LED still attract researches' passion. Recently, we have developed a new method combining nanosphere lithography and pulsed laser deposition to fabricate Si-based arrays nanostructures, and have obtained remarkably enhanced photoluminescence (PL) from these structures. The Si based nanostructures are hemisphere shell arrays (HSSAs) or nanoflower arrays assembled by silicon-germanium (SiGe) alloy. These structures include non-close-packed and close-packed ones, single layer and multilayer ones, as well as arrays on different substrates.We investigated the photoluminescence of these arrays structures, and found that all these structures could enhance the photoluminescence intensities. Among them, the enhancement of light emission from SiGe double layer HSSAs (DL-HSSAs), which is as high as 700 folds, is the highest among those of all structures.Employing transmission electron microscopy (TEM), scanning electron microscopy (SEM), time-resolved PL, and electromagnetic simulation etc, we found the enhancement of light emission in Si based nanostructures originated mainly from the increase of extraction efficiency of photons from the nanostructures. The electromagnetic simulation of enhancement matched well the experiment data. We also found that these enhancements are related to degree of order of arrays. In highly order arrays, the enhancement is higher than that in other arrays.

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