Surface-Plasmon-Enhanced photoluminescence from Nano-Porous Silicon Layer

Wang Yuxuan,Tang Xuan,Liu Fang,Rao Yi,Huang Yidong,Zhang Wei,Peng Jiangde

DOI: https://doi.org/10.1109/INOW.2007.4302941

2007-01-01

Abstract:In this paper, we report experimental results to demonstrate the enhancement of the photoluminescence from nanostructural porous silicon due to Purcell effect of the metal surface plasmons.

What problem does this paper attempt to address?

Surface Plasmon Enhanced Photoluminescence from Porous Silicon Nanowires Decorated with Gold Nanoparticles

Haiping Tang,Chao Liu,Haiping He

DOI: https://doi.org/10.1039/c6ra06019f

IF: 4.036

2016-01-01

RSC Advances

Abstract:About 8-fold photoluminescence enhancement is realized in porous Si nanowires via coupling with the surface plasmon of Au nanoparticles.
Effect of Scattering from Localized Surface Plasmon Resonance on Improving the Luminescence Efficiency of Silicon Nitride Light-Emitting Devices

Feng Wang,Changrui Ren,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1007/s11051-013-1419-6

IF: 2.533

2013-01-01

Journal of Nanoparticle Research

Abstract:We demonstrate the localized surface plasmon resonance enhanced silicon-rich silicon nitride based light-emitting devices by embedding the silver nanostructures between the silicon substrate and luminescent matrix. An about 30 times enhancement of external quantum efficiency is achieved by these inserted silver nanostructures. We attribute this distinct enhancement mainly to the improved backscattering and carrier injection by the addition of silver nanostructures. The coupling between localized surface plasmons and excitons as well as the increase of light extraction via the surface roughening of ITO electrode also contributes to the enhancement of electroluminescence intensity and its efficiency.
Plasmonically-Enhanced Mid-Infrared Photoluminescence in A Metal/Narrow-Gap Semiconductor Structure

Pengqi Lu,Chunfeng Cai,Bingpo Zhang,Bozhi Liu,Huizhen Wu,Gang Bi,Jianxiao Si

DOI: https://doi.org/10.1209/0295-5075/114/37005

2016-01-01

Abstract:We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices. Copyright (C) EPLA, 2016
Localized-surface-plasmon enhanced emission from porous silicon by gold nanoparticles.

Hui Wang,Zhenghua An,Qijun Ren,Hengliang Wang,Feilong Mao,Zhanghai Chen,Xuechu Shen

DOI: https://doi.org/10.1166/jnn.2011.4090

2011-01-01

Journal of Nanoscience and Nanotechnology

Abstract:The porous silicon (PS) samples, decorated by Au nanoparticles (NPs) possessing localized-surface-plasmon (LSP) resonance, are prepared by the conventional anodization method. Photoluminescence (PL) is studied systematically, in particular, its dependence on the excitation power. It is found that undecorated PS samples exhibit a saturation behavior in PL intensity with increasing the pumping laser power, while the luminescence of Au-decorated PS hybrid samples have a purely linear dependence on the excitation power. In the linear response region of PS samples, addition of metal NPs layer moderately suppresses the emission while, in the saturation region, the net emission is enhanced by approximately up to 4-fold. Several possible mechanisms are discussed. We believe that the observed PL enhancement in saturation region is dominantly due to the resonant coupling between the LSP of Au NPs and the electronic excitation of PS, which inhibits the nonradiative Auger recombination process at high excitation power. These results indicate that the plasmon effect could be useful for designing even more efficient optoelectronic devices such as super bright light emitting devices and solar cells with high efficiencies. Despite many challenges, Au NPs can potentially be applied to introduce LSP resonance for the future silicon-based optoelectronics or photonics.
Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Rui Wang,Minghua Wang,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1364/ome.2.001437

2012-01-01

Optical Materials Express

Abstract:Silver (Ag) nanostructures with different sizes and densities were deposited onto the luminescence matrixes to improve the photoluminescence (PL) intensity of silicon nitride (SiNx) films via localized surface plasmon resonance (LSPR) coupling. The shape of PL spectra from the SiNx matrixes is mainly determined by their stoichiometric ratio. Moreover, both the surface coverage and the size of Ag nanostructures should be considered for the improvement of PL intensity. The optimal PL intensity of SiNx films might be achieved by the addition of Ag nanostructures with proper surface coverage and size due to the enhanced photo-excitation by LSPR. The dipolar resonance absorption of Ag nanostructures has an insignificant contribution on this improvement.
Localized-surface-plasmon enhanced luminescence from porous silicon by gold nanoparticles

hui wang,zhenghua an,qijun ren,zhanghai chen,xuechu shen

DOI: https://doi.org/10.1109/INEC.2010.5424490

2010-01-01

Abstract:The porous silicon (PS), decorated by Au nanoparticles (NPs) possessing strong localized-surface-plasmon (LSP) resonance, are prepared by conventional anodization method. Luminescence properties are studied systematically and an approximately ten-fold enhancement of photoluminescence has been observed with the decoration of Au NPs, which is mainly due to the resonance coupling between the LSP of Au NPs and the electronic excitation of PS. The other factors affecting the optical properties of the hybrid system, such as emission from Au NPs themselves and light multi-scattering, will be discussed and the underlying mechanisms will be analyzed. These results indicate that, despite many challenges, Au NPs can be potentially applied in the future silicon-based optoelectronics.
Surface Plasmon Enhancement of Optical Absorption in Thin-Film Silicon Solar Cells

Yu. A. Akimov,K. Ostrikov,E. P. Li

DOI: https://doi.org/10.1007/s11468-009-9080-8

IF: 2.726

2009-01-01

Plasmonics

Abstract:Strong electromagnetic field enhancement that occurs under conditions of the surface plasmon excitation in metallic nanoparticles deposited on a semiconductor surface is a very efficient and promising tool for increasing the optical absorption within semiconductor solar cells and, hence, their photocurrent response. The enhancement of the optical absorption in thin-film silicon solar cells via the excitation of localized surface plasmons in spherical silver nanoparticles is investigated. Using the effective medium model, the effect of the nanoparticle size and the surface coverage on that enhancement is analyzed. The optimum configuration and the nanoparticle parameters leading to the maximum enhancement in the optical absorption and the photocurrent response in a single p-n junction silicon cell are obtained. The effect of coupling between the silicon layer and the surface plasmon fields on the efficiency of the above enhancement is quantified as well.
Electroluminescence Enhancement from Silicon Nanocrystals Using Doublelayer Surface-Plasmon Waveguide

Tang Xuan,Wang Yuxuan,Huang Yidong,Zhang Wei,Peng Jiangde

DOI: https://doi.org/10.1109/INOW.2007.4302912

2007-01-01

Abstract:Using doublelayer surface-plasmon waveguides, Purcell factor can be improved dramatically. Current-voltage characteristics have been investigated for low voltage electroluminescence operation.
Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Jiahao Cao,Hanjie Zhang,Xiaodong Pi,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1039/d1na00287b

IF: 5.598

2021-01-01

Nanoscale Advances

Abstract:We propose a scheme utilizing the double plasmon modes of gold nanorods (GNRs) to efficiently increase the Förster resonant energy transfer (FRET) efficiency and enhance the photoluminescence (PL) of Si quantum dots (Si QDs) nearby. Detailed PL and decay dynamics studies are performed for the hybrid nanostructures composed of metallic nanoparticles (MNPs) coated with a Si QD-absorbed silica shell. Plasmon enhanced FRET between Si QDs has been observed and proposed as the third enhancement mechanism for the plasmon-enhanced photoluminescence in addition to excitation enhancement and emission enhancement mechanisms. A maximum FRET efficiency of 46.3% is obtained, which is enhanced by a factor of 8.7 compared to that of samples without MNPs. The dependence of the energy transfer efficiency and the enhancement of the acceptor emission on the surface plasmon resonance (SPR) wavelength, metal-QD distance and QD ratio is examined. The FRET enhancement mechanism dominates when the coupling of plasmon-donor is much stronger than that of plasmon-acceptor with a high acceptor/donor ratio.
Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

Dongsheng Li,Peihong Cheng,Deren Yang

DOI: https://doi.org/10.1109/GROUP4.2008.4638116

2008-01-01

Abstract:The photoluminescence of silicon-rich silicon nitride (SRSN) film was enhanced by coupling with the localized surface plasmon of Ag island film. It is found that the deposited Ag film induces an enhancement of excitation of SRSN film through increasing the absorption of SRSN film. Furthermore, it is demonstrated that the emission enhancement is much more decided by the excitation wavelength than by the Ag island scattering.
The Coupling Between Localized Surface Plasmons and Excitons Via Purcell Effect

Feng Wang,Dongsheng Li,Deren Yang,Duanlin Que

DOI: https://doi.org/10.1186/1556-276x-7-669

2012-01-01

Nanoscale Research Letters

Abstract:The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon-rich silicon nitride (SiN (x) ) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average position of the excitons is located at approximately 40 nm beneath the top surface of the SiN (x) films. The approaches for further improving the optoelectrical properties of the luminescence matrix are anticipated based on the model we adopted. The optimization of the thickness of the luminescence matrix as well as the size and shape of metal nanostructures may be the alternative approaches. Besides, the application of multilayers with the luminescence matrix inserted between barrier layers (we defined it as confined structures here) may be also an available choice. Our work may provide a deep comprehension on the coupling between LSPs and excitons, which is not limited to a certain luminescence material but with unconfined structures.
Photoluminescence Enhancement in Wide Spectral Range Excitation in CsPbBr3 Nanocrystal/ag Nanostructure Via Surface Plasmon Coupling

Chunfeng Cai,Xiaoyu Wang,Li Ling,Gang Bi,Zhousu Xu,Huizhen Wu

DOI: https://doi.org/10.1364/ol.44.000658

IF: 3.6

2019-01-01

Optics Letters

Abstract:This work demonstrates the surface plasmon (SP)-exciton coupling effect on the photoluminescence (PL) enhancement in CsPbBr3 nanocrystal (NC) at PMMA/Ag nanostructure (NS) in wide spectral range excitation. The spectra dependent time resolved PL measurement reveals that the emission photons are from the recombination of localized excitons and the PL enhancement can be attributed to the near-field effect, which is also supported by evidence that the enhancements are nearly the same in the whole excitation wavelength from 200 nm to 900 nm. The non-spectral dependence of the enhancement factor suggests that there is the same dynamic process of hot electrons in CsPbBr3 NC in multiphoton excitation. The hot electrons will relax into localized exciton states, and the electric field generated by SPs will enhance the radiative recombination of excitons. This work will have benefits for revealing dynamics of hot electron relaxing and interactions in multi-photon absorption, as well as the inner mechanism of SP coupling effects.
Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Peihong Cheng,Dongsheng Li,Min Xie,Deren Yang,Jilong Bao

DOI: https://doi.org/10.1016/j.optcom.2011.12.015

IF: 2.4

2012-01-01

Optics Communications

Abstract:The photoluminescence of silicon-rich nitride (SRN) film was coupled with the surface plasmon (SP) of Ag island film. It shows that the photoluminescence (PL) enhancement or quenching is strongly dependent on the excitation wavelength. When the excitation wavelength is near the SP resonance spectral region, the Ag islands act as a photo antenna, leading to the enhancement of the excitation cross-sections and therefore the photoemission enhancement. Furthermore, it is demonstrated that the metal island size also has an influence on the emission enhancement, but the enhancement is much more decided by the excitation wavelength than by the Ag island radiative scattering.
Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Yue Zhao,Dong-Sheng Li,Wen-Bin Sang,De-Ren Yang,Min-Hua Jiang

DOI: https://doi.org/10.1142/s0217984908015280

2008-01-01

Modern Physics Letters B

Abstract:In this paper, the microstructure of porous silicon was discussed by scanning electron microscopy and Raman spectra. The compositions of the samples were studied by Xray diffraction and electron diffraction. The luminescent properties of porous silicon were explored by the PL measurements. The results showed that the structure of the top porous silicon prepared by epitaxial silicon consists of meso-pores and that of the underlying porous silicon consists of macro-pores. Furthermore, the structure of porous silicon prepared by heavily doped silicon is made of nano-pores. The composition of porous silicon consists of the single-crystal phase, poly-crystal phase and amorphous-crystal phase, respectively. In addition, the luminescence of porous silicon may come from the defects on the silicon-rod surface and in Si complexes including siloxene, Si oxide and Si hydrides, and may not be related to amorphous phase and nano-phase.
Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Lian Hu,Huizhen Wu,Chunfeng Cai,Tianning Xu,Bingpo Zhang,Shuqiang Jin,Zhengfen Wan,Xiaodong Wei

DOI: https://doi.org/10.1021/jp210269m

2012-01-01

The Journal of Physical Chemistry C

Abstract:In this paper, we report distinct enhancement of surface-state emissions (SSEs) of colloidal CdSe quantum dots (QDs) via coupling to localized plasmons (LPs) in Ag nanostructures. The roles of oleic acid (OA) ligand on QDs in the formation of Ag nanostructures and in the intense enhancement of SSEs of CdSe QDs are explored. We find that OA ligand on CdSe QDs plays a critical role in modifying the morphology of the contacted Ag, which consequently impacts the coupling of QD emitters with LPs in Ag. A systematic study of size effect of QDs on coupling of SSEs with LPs shows that as-deposited small Ag particles favorably enhance the SSEs of small-size CdSe QDs. The OA ligand on QDs yields better Ag crystallinity and clear corners during the annealing process; therefore, it promotes reshaping of small Ag particles into larger ones, favorable to enhance the SSEs of large-size CdSe QDs. The annealed QDs/Ag hybrid structures are more stable than the unannealed ones due to the loss of the OA ligand in the heating process. The selective coupling of QD emitters with LPs in Ag nanostructures allows feasible realization of microscale fluorescent color patterns. The approach of OA-assisted modification of plasmonic properties of Ag nanostructures provides a new route to synthesizing bright luminescence materials and devices that use colloidal QDs.
Enhancement of Light Emission from Nanostructured In(2)O(3) Via Surface Plasmons.

Dongjiang Qiu,Zhengfen Wan,Xikun Cai,Zijian Yuan,Lian Hu,Bingpo Zhang,Chunfeng Cai,Huizhen Wu

DOI: https://doi.org/10.1364/oe.18.023385

IF: 3.8

2010-01-01

Optics Express

Abstract:We report the construction of In(2)O(3)/Ag/In(2)O(3) sandwich nanostructures and realization of effective coupling with surface plasmon (SP) modes. An enhancement of photoluminescence as large as 278-fold is achieved for the new nanostructures, while only eightfold is obtained from bilayer structures. The advancement of the nanostructures is that both the frequency of incidence photons and the in-plane wavevector of the excited SP modes along each side of the sandwiched nanometer metal layer are identical, thus the momenta mismatch between two SP modes which inevitably occurs in commonly used metal/dielectric bilayer structures is no longer a problem. The fulfillment of the cross coupling and resonance conditions of the two SP modes leads to the tremendous amplification of light emission. Such sandwich nanostructures can be readily extended to other dielectric/metal/dielectric nanomaterial combinations and identified as technologically useful for SP mediated light emitting devices.
Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Shu Zhou,Xiaodong Pi,Zhenyi Ni,Yi Ding,Yingying Jiang,Chuanhong Jin,Christophe Delerue,Deren Yang,Tomohiro Nozaki

DOI: https://doi.org/10.1021/nn505416r

IF: 17.1

2015-01-01

ACS Nano

Abstract:Localized surface plasmon resonance (LSPR) of doped Si nanocrystals (NCs) is critical to the development of Si-based plasmonics. We now experimentally show that LSPR can be obtained from both B- and P-doped Si NCs in the mid-infrared region. Both experiments and calculations demonstrate that the Drude model can be used to describe the LSPR of Si NCs if the dielectric screening and carrier effective mass of Si NCs are considered. When the doping levels of B and P are similar, the LSPR energy of B-doped Si NCs is higher than that of P-doped Si NCs because B is more efficiently activated to produce free carriers than P in Si NCs. We find that the plasmonic coupling between Si NCs is effectively blocked by oxide at the NC surface. The LSPR quality factors of B- and P-doped Si NCs approach those of traditional noble metal NCs. We demonstrate that LSPR is an effective means to gain physical insights on the electronic properties of doped Si NCs. The current work on the model semiconductor NCs, i.e., Si NCs has important implication for the physical understanding and practical use of semiconductor NC plasmonics.
Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid

Salvador Escobar Guerrero,Rocío Nava,Jorge-Alejandro Reyes-Esqueda

2023-11-12

Abstract:The low efficiency of porous silicon (p-Si) luminescence hinders the development of silicon-based optoelectronic devices. The increase in p-Si emission using near-field enhancement, owing to the incorporation of gold nanoparticles (AuNPs) into the photonic structure, is probably the most viable alternative. However, the coupling of plasmon resonance to p-Si emission is challenging because of the difficulty in controlling the size and location of the AuNPs with respect to the emissive p-Si layer. In this study, AuNPs were synthesized by clean direct reduction of chloroauric acid inside a p-Si photonic structure. As a result, AuNPs could be synthesized all along the pores of the p-Si structure, allowing to obtain a six-fold enhancement of the p-Si photoluminescence, specifically for the emission band at 567 nm owing to the plasmon effect. Possible applications of this hybrid material include light-emitting devices and photoluminescence-based sensors.

Optics,Mesoscale and Nanoscale Physics,Materials Science
Photoluminescence from Silicon Nanocrystals in Encapsulating Materials

Z. Deng,X. D. Pi,J. J. Zhao,D. Yang

DOI: https://doi.org/10.1016/j.jmst.2013.01.006

2013-01-01

Abstract:Naturally oxidized freestanding silicon nanocrystals (Si NCs) are incorporated in commonly used encapsulating materials to explore the photoluminescent application of Si NCs in device structures such as solid-state lighting light-emitting diodes (LEDs) and solar cells. The quantum yield of Si NCs before the incorporation has reached about 45% at the excitation wavelength of 370 nm without any special surface modification. It is found that medium loadings, e.g., 5 wt% of Si NCs in encapsulating materials help to obtain high external quantum efficiency (EQE) of the mixtures of Si NCs and encapsulating materials. The curing of encapsulating materials significantly reduces EQE. Among all the encapsulating materials investigated in this work, silicone-OE6551 enables the highest EQE (21% at excitation wavelength λex = 370 nm) after curing. Based on current findings, we have discussed the continuous efforts to advance the photoluminescent application of Si NCs.

Surface-Plasmon-Enhanced photoluminescence from Nano-Porous Silicon Layer

Surface Plasmon Enhanced Photoluminescence from Porous Silicon Nanowires Decorated with Gold Nanoparticles

Effect of Scattering from Localized Surface Plasmon Resonance on Improving the Luminescence Efficiency of Silicon Nitride Light-Emitting Devices

Plasmonically-Enhanced Mid-Infrared Photoluminescence in A Metal/Narrow-Gap Semiconductor Structure

Localized-surface-plasmon enhanced emission from porous silicon by gold nanoparticles.

Localized Surface Plasmon Resonance Enhanced Photoluminescence from SiNx with Different N/Si Ratios

Localized-surface-plasmon enhanced luminescence from porous silicon by gold nanoparticles

Surface Plasmon Enhancement of Optical Absorption in Thin-Film Silicon Solar Cells

Electroluminescence Enhancement from Silicon Nanocrystals Using Doublelayer Surface-Plasmon Waveguide

Enhanced Photoluminescence of Silicon Quantum Dots in the Presence of Both Energy Transfer Enhancement and Emission Enhancement Mechanisms Assisted by the Double Plasmon Modes of Gold Nanorods

Photoluminescence enhancement of Silicon-rich silicon nitride film induced by silver localized surface plasmon

The Coupling Between Localized Surface Plasmons and Excitons Via Purcell Effect

Photoluminescence Enhancement in Wide Spectral Range Excitation in CsPbBr3 Nanocrystal/ag Nanostructure Via Surface Plasmon Coupling

Enhancing the Photoluminescence Intensity of Silicon-Rich Nitride Film by Localized Surface Plasmon Enhanced Photo-Excitation

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Plasmon-Enhanced Surface-State Emission of CdSe Quantum Dots and Its Application to Microscale Luminescence Patterns

Enhancement of Light Emission from Nanostructured In(2)O(3) Via Surface Plasmons.

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid

Photoluminescence from Silicon Nanocrystals in Encapsulating Materials