Plasmonically-Enhanced Mid-Infrared Photoluminescence in A Metal/Narrow-Gap Semiconductor Structure

Pengqi Lu,Chunfeng Cai,Bingpo Zhang,Bozhi Liu,Huizhen Wu,Gang Bi,Jianxiao Si
DOI: https://doi.org/10.1209/0295-5075/114/37005
2016-01-01
Abstract:We report the enhancement of the mid-infrared (MIR) luminescence intensity in a nanoscale metal/semiconductor structure by the coupling of surface plasmon polaritons (SPPs) with excitons in a narrow-gap semiconductor. The SPPs are efficiently excited by the total internal reflection photons at a metal/semiconductor interface. The intense electric field induced by SPPs, in turn, greatly changes the radiative recombination rates of the excitons generated by the pumping laser and thus the MIR luminescence intensity. The finding avails the understanding of fundamental science of SPs in narrow-gap semiconductors and the development of novel MIR devices. Copyright (C) EPLA, 2016
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