Abstract:Polysilicon serves as a primary raw material in the production of solar cells and semiconductors. However, its impurity content, particularly boron, poses significant challenges during the chemical vapor deposition (CVD) process. Therefore, it is essential to investigate the behavior of boron impurities during CVD. In this study, we conducted first-principles calculations to explore the adsorption behavior and deposition mechanism of boron-containing gases (BCl3, BHCl2, B2H6) on the Si(100) surface. We considered different adsorption sites and performed a systematic analysis of various adsorption systems' adsorption energy, charge transfer, and electronic properties. Our findings indicate that BCl3, BHCl2, and B2H6 molecules undergo dissociative chemisorption at specific adsorption sites. Moreover, charge transfer analysis confirms that each of these adsorbed molecules functions as an electron acceptor. Subsequent analyses, including total charge density (TCD), charge density difference (CDD), total density of states (TDOS), and projected density of states (PDOS), collectively underscore the robust electronic interactions between the gaseous molecules and the Si(100) surface. Through the computation of transition states and energy barriers across three potential reaction pathways, we identify a predominant sequence: BCl3 -> BCl2+Cl -> BCl+Cl -> B+Cl, that governs boron impurity formation on the Si(100) surface during CVD. Our work elucidates the underlying microscopic mechanisms of boron-containing gas adsorption and deposition in the CVD context.

PREPARATION AND CHARACTERIZATION OF BORON DOPED CARBON THIN FILM BY LOW PRESSURE CHEMICAL VAPOR DEPOSITION

Preparation of Thin Films of Carbon-Based Compounds

Composition and Structure of BCN Films Prepared by Ion Beam-Assisted Pulsed Laser Deposition

Chemical Structure and Micro-Mechanical Properties of Ultra-Thin Films of Boron Carbide Prepared by Pulsed-Laser Deposition

Turbostratic Boron Carbonitride Films Produced by Bias-Assisted Hot Filament Chemical Vapor Deposition

A First-Principles Investigation into the Adsorption Behavior and Deposition Mechanism of Boron-Containing Gases on Si(100) Surfaces During Chemical Vapor Deposition

Direct Synthesis of Sp3‐hybridized BCN Compound by High Pressure and Temperature

Mechanical Properties and Bonding Structure of Boron Carbon Nitride Films Synthesized by Dual Ion Beam Sputtering

Dielectric Barrier Discharge Assisted Chemical Vapor Deposition of Boron Nitride Phosphide Films on A Quartz Substrate

Effects of Boron-Doped on Photocatalysis and Hydrophilicity of TiO<sub>2</sub> Film

Preparation and characterization of t-BN coatings on the surface of carbon fibers

BN Films Deposited by HFPECVD and the Mechanism of the Process

Effects of Boron-Doped on Photocatalysis and Hydrophilicity of TiO2 Film

Superhard Boron-Rich Boron Carbide with Controlled Degree of Crystallinity

Fabrication and characterization of hot-pressed B-rich boron carbide

Synthesis of BCN thin films by nitrogen ion beam assisted pulsed laser deposition from a B4C target

Raman characterization of boron doped tetrahedral amorphous carbon films

Fabrication and Electrical Properties of Semi-Conductive H-Bncx Thin Films

Influence of Carbon Content on the Crystallographic Structure of Boron Carbide Films

Boronated Tetrahedral Amorphous Carbon (Ta-C:B)

Direct Patterning of Boron-doped Amorphous Carbon Using Focused Ion Beam-assisted Chemical Vapor Deposition