Abstract:Integration of lead zirconate titanate (PZT) ferroelectrics into CMOS-Si technology has become a perennial challenge due to the continuously shrinking thermal budget in semiconductor processing. In this work, Pb(Zr0.53Ti0.47)O-3 (PZT) thick films (similar to 1 mu m) were prepared on LaNiO3 buffered (111)Pt/Ti/SiO2/(100) Si substrates via a low temperature (350 degrees C) sputtering deposition followed by a rapid thermal process (RTP). This two-step fabrication process resulted in a highly (001)-oriented perovskite PZT film with a dense, fine-grain morphology and reduced strains, hence an optimal electrical performance intrinsic to the chemical composition was achieved. EDS and XPS analyses verified a desirable evolution of the chemical stoichiometry in the RTP, as well as the expected chemical bonding states of the elements in the annealed films. Moreover, prototypical piezoelectric thin film cantilevers fabricated from the PZT/LaNiO3/Pt/Ti/SiO2/(100)Si heterostructure yielded a large transverse piezoelectric coefficient (e(31,f)) up to 15.7 C/m(2), together with a high coupling coefficient k(2)similar to 0.23 for energy conversion efficiency. The PZT films showed high e(3)(1,)(f) coefficients (similar to 10 C/m(2)) even when the RTP annealing time was reduced down to 2 min. Such a piezoelectric performance is close to the highest ones reported in the literature from epitaxial or highly-oriented PZT films, which require a much higher thermal budget for processing. These high quality PZT films open up many possibilities for the integration of piezoelectricity into Si-based micro-electro-mechanical systems (MEMS).

Deposition and Characterization of Pb(Zr,Ti)O3sol–gel Thin Films for Piezoelectric Cantilever Beams

Preparation and Characterization of PZT Thick Film for Piezoelectric Cantilever Beam by Sol -Gel

Preparation of PZT Thick Film by a High Speed Sol-gel Method

Fabrication and Characterization of Piezoelectric Cantilever for Micro Transducers

Fabrication of Piezoelectric Cantilever Beam Based on Nanostructured PZT Film

Processing and Thickness Effects on the Microstructure and Electrical Properties of Sol–gel Deposited Pb(Zr, Ti)O3 Films

Low Thermal Budget Lead Zirconate Titanate Thick Films Integrated on Si for Piezo-Mems Applications

Preparation and Application of Lead Zirconate Titanate (PZT) Films Deposited by Hybrid Process: Sol-Gel Method and Laser Ablation

Growth and Characterization of Lead Zirconate Titanate (PZT) Thin Films

Crystalline Orientation Dependence Of Nanomechanical Properties Of Pb(Zr0.52ti0.48)O-3 Thin Films

Effect of thickness on microstructure and electrical properties of PZT films prepared by a modified Sol-Gel method

Electromechanical Properties of Microcantilever Actuated by Enhanced Piezoelectric PZT Thick Film

Preparation and characterization of lead zirconate titanate thick films prepared by chemical solution deposition for MEMS applications

Sol Gel Derived Pzt Thin Films For Mems Applications

Fabrication and electrical properties of lead zirconate titanate thick films by the new sol–gel method

Large Piezoelectricity on Si from Highly (001)-Oriented PZT Thick Films Via a CMOS-compatible Sputtering/rtp Process

Pulsed Laser Deposited Lead Zirconate Titanate Thin Films for Micro Actuators

Electrical and Mechanical Properties of PZT Thin Films Prepared by Hybrid Process of Sol-Gel Technique and Laser Ablation

The Annealing Induced Extraordinary Properties of SI Based ZNO Film Grown by RF Sputtering

The Preparation and Characterization of the PZT Thin Film with (100) Peak Preferred Orientation

Fabrication and electrical properties of lead zirconate titanate thick films using a new sol-gel processing technique