Abstract:In this study, the growth of a high-quality AlGaN/GaN high electron mobility transistor (HEMT) heterostructure on silicon (Si) by metal-organic chemical vapor deposition (MOCVD) was investigated by utilizing the both AlN/GaN superlattice (SL) and Al0.07Ga0.93N back barrier (BB) techniques. Atomic force microscope (AFM) and high-resolution x-ray diffractometer (HR-XRD) confirm low surface roughness of 0.26 – 0.34 nm and the formation of high-quality AlN/GaN SL and GaN channel. The AlGaN/GaN heterostructures exhibit high electron mobility of up to 1700 cm2/V∙s and high carrier concentration density of (1.02 – 1.06 × 1013 cm-2) for both heterostructures. The AlGaN/GaN HEMT devices demonstrate low specific contact resistivity (c) of 2.7 × 10-6 Ω·cm2 and low contact resistance (RC) of 0.3 Ω·mm for the heterostructure with BB layer. Furthermore, the DC characteristics demonstrate that incorporating Al0.07Ga0.93N BB in the heterostructure results in a 19.2% increase in lateral breakdown voltage (with a 10 μm spacing) and a 27.5% increase in vertical breakdown voltage (at 1 mA/cm2), compared to the heterostructure without Al0.07Ga0.93N BB within the AlN/GaN SL structure. Moreover, improvement of 10.6% in maximum saturation current (IDS) and 15.2% in on-resistance (RON)has been for the device fabricated on Al0.07Ga0.93N BB structure. The insertion loss of the buffer layer improves to –1.40 dB/mm at 40 GHz. Consequently, the proposed heterostructure investigated in this study demonstrates suitability for electronic device applications.

Studies on Uniformity of MOVPE-Grown AlGaN/GaN HEMT Structures by Spectroscopic Ellipsometry

Fabrication of AlGaN/GaN High-Electron-mobility Transistors

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition

Static Characteristics of AlGaN/GaN High Electron Mobility Transistors with Different Thickness of AlGaN Layer

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Characteristics of AlGaN/GaN HEMTs Grown by Plasma-Assisted Molecular Beam Epitaxy

High Quality and Uniformity Gan Grown on 150 Mm Si Substrate Using In-Situ Nh3 Pulse Flow Cleaning Process

Improved Algan/Gan Hemts Grown on Si Substrates Using Stacked Algan/Aln Interlayer by Mocvd

AlGaN/GaN High Electron Mobility Transistors with a Low Sub-Threshold Swing on Free-Standing GaN Wafer

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE

Low contact resistance and high breakdown voltage of AlGaN/GaN HEMT grown on silicon using both AlN/GaN superlattice and Al0.07Ga0.93N back barrier layer

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Algan/Gan Heterostructure Grown By Metalorganic Vapor Phase Epitaxy

AlGaN/GaN HEMT Device Optimization and I-V Characteristics

Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Highly Uniform Growth of 2-Inch GaN Wafers with a Multi-Wafer HVPE System