Ferrite-Partially-Filled On-Chip RF Inductor Fabricated Using Low-Temperature Nano-Powder-Mixed-Photoresist Filling Technique for Standard CMOS

Chen Yang,Feng Liu,Tian-Ling Ren,Li-Tian Liu,Guang Chen,Xiao-Kang Guan,Albert Wang,Zhen-Xing Yue
DOI: https://doi.org/10.1109/iedm.2007.4419034
2007-01-01
Abstract:This paper reports new fully-CMOS-compatible on-chip RF inductors with Ni-Zn-Cu and Co2Z-type ferrite-partially-filled structures fabricated using a novel low-temperature nano-powder- mixed-photoresist filling technique. Measured improvements are up to +35% in L and +250% in Q across multi-GHz with f0 to 11.4 GHz.
What problem does this paper attempt to address?