Abstract:In this paper, a high-quality ZnO thin film was first grown on a Si(111) substrate by plasma-assisted molecular beam epitaxy. A ZnO thin film grown at 300°C was used as an intermediate layer for the growth. The dependence of the ZnO thin-film quality on the substrate temperature was studied by using X-ray diffraction and photoluminescence (PL). Only poly crystal ZnO could be obtained from direct growth on the Si substrate, because of the large differences in lattice constant between the Si substrate and ZnO thin film and the existence of an oxide layer on the Si surface. The best ZnO was obtained at a substrate temperature of 550°C. A low-temperature ZnO buffer layer is induced between the substrate and ZnO film to reduce the effects of the oxide layer and the mismatch. Next, a high-temperature ZnO layer is deposited on this buffer layer to obtain a high-quality thin film. The effects of the buffer layer on the structure and PL of ZnO thin films are studied. For the ZnO films employing the buffer layer, only one peak from the ZnO (002) orientation is obtained in the X-ray diffraction measurement, and the full-width at half-maximum (FWHM) of the (002) ZnO peak is less than 0.180°. The ZnO thin film exhibits a smooth surface as measured by atomic force microscopy, and the PL spectra show a strong ultraviolet band emissions with little or no deep-level emission related to defects. The FWHMs of the PL spectra are narrower compared to the ZnO film without a buffer layer. These measurements indicate that high-quality ZnO films can be obtained by employing a low-temperature grown ZnO buffer layer.

Effects of homo-buffer layer on properties of ZnO films grown on Si(111) by pulsed laser deposition

Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

Effects of Growth Atmosphere and Homo-Buffer Layer on Properties of ZnO Films Prepared on Si(1 1 1) by PLD

Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Structure and Properties of ZnO Films Grown on Si Substrates with Low Temperature Buffer Layers

Research on ZnO/Si Heteroepitaxy Using Pulsed Laser Deposition

Effects of SiC Buffer on the Structural and Photoelectrical Properties of ZnO Thin Films Grown on Si(111) by PLD

Effects of the Low-temperature Buffer Layer on the Properties of ZnO Thin Films

Effects Of Homo-Buffer Layer And Annealing Treatment On Optical Property Of Zno Thin Film

Effect of Oxygen Pressure on the Structural and Optical Properties of ZnO Thin Films on Si (111) by PLD

Effect of the ZnO buffer layer thickness on AZO film properties

Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

Effects of Oxygen Pressure on Optical Properties of ZnO Thin Films

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)

Effects of Substrate Temperature on Structural and Luminescent Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition

Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer

Effects of annealing temperature on structural and optical properties of homo-buffer layer ZnO thin films