Abstract:ZnO has recently become a very popular material due to its great potential for optoelectronics applications. The large direct band gap of 3.3 eV, along with the large exciton binding energy (60 meV) and many other advantages, make ZnO a strong candidate for the next generation of ultraviolet light emitting and lasing devices operating at high temperatures and in harsh environments. The ZnO based light emitting diode (LEDs) will be brighter than the current state-of-art nitride light emitters, and at the same time, the production cost will be reduced significantly compared with current technology. The pulsed laser deposition (PLD) technique has been proved to be a very effective method to deposit high-quality films with complex composition. This technique has some other advantages such as deposition in controllable oxygen partial pressure, high controllability of film composition and growth process, and relatively high deposition rates. In this paper, the ZnO films were deposited on single-crystalline Si(100) substrates by pulsed laser deposition (PLD) method. X-ray diffraction (XRD),atom force microscope (AFM),transmission electron microscope (TEM)and photoluminescence (PL) spectrum measurements were employed for the investigation of crystal quality and light emitting performance. The dependence of crystal quality and photoluminescence performance on the growth temperature and oxygen partial pressure was investigated. The results indicate that high-quality ZnO thin films with perfect c-axis preferred orientation and smooth and dense microstructure have been successfully grown under optimized conditions (700 ℃, 20 Pa). The near-band-edge emissions in PL spectra are greatly enhanced and the deep level emissions are weakened with the increase of oxygen pressure due to the improvement of stoichiometry, the ZnO films grown under high O_2 pressure (20 Pa) are well close to stoichiometry and of optically high quality. Therefore, it can be concluded that the PL spectra depend on the stoichiometry and the microstructure of the film. The achievement reported here will be used to control the optical properties of ZnO thin films for optical device applications.

Effects of Growth Atmosphere and Homo-Buffer Layer on Properties of ZnO Films Prepared on Si(1 1 1) by PLD

Effects of Homo-buffer Layer on Properties of ZnO Films Grown on Si(1 1 1) by Pulsed Laser Deposition

Effects of homo-buffer layer on properties of ZnO films grown on Si(111) by pulsed laser deposition

Epitaxial growth of ZnO thin films on Si substrates by PLD technique

Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer

Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

Research on ZnO/Si Heteroepitaxy Using Pulsed Laser Deposition

Growth and Photoluminescence Characteristics of High Quality ZnO Films by Pulsed Laser Deposition (PLD) Method

Structure and Properties of ZnO Films Grown on Si Substrates with Low Temperature Buffer Layers

Effect of Oxygen Pressure on the Structural and Optical Properties of ZnO Thin Films on Si (111) by PLD

Effects Of Homo-Buffer Layer And Annealing Treatment On Optical Property Of Zno Thin Film

Effects of Low-Temperature-Grown Zno Buffer Layer and Zn/O Ratio on the Properties of High-Temperature-Overgrown Zno Main Layer on Si Substrate by Mbe

Effects of the Low-temperature Buffer Layer on the Properties of ZnO Thin Films

Effects of Oxygen Pressure on Optical Properties of ZnO Thin Films

Structural, optical and electrical properties of ZnO films grown by pulsed laser deposition (PLD)

Growth and Properties of ZnO Film Grown on AlN Buffer Layer by PLD

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

Layer-By-Layer Growth of High-Optical-Quality Zno Epitaxy Film on Si(111) Substrate Using A Mgo/Tin Buffer Layer by Pulsed-Laser Deposition

Improvement of the crystalline quality of the ZnO epitaxial layer on a low-temperature grown ZnO buffer layer