Abstract:Recently much attention has been paid to short wavelength lasers for use in high density information storage. It is widely accepted that ZnO is one of the most promising materials for producing an ultraviolet laser at room temperature due to its wide direct band gap (E_g=3.37 eV) and large excitonic binding energy of 60 meV. It has potential uses in optoelectronical systems such as light emitting diodes(LEDs), photodetectors, electroluminecence devices and solar cells. To obtain high quality ZnO thin films a variety of techniques may be used such as molecular beam epitaxy(MBE), metal organic chemical vapor deposition(MOCVD), magnetron sputtering, pulsed laser deposition, and so on. Among them, MOCVD provides the advantage of growing high-quality films due to its versatility in controlling the various thermodynamic interactions. ZnO has not only the same crystal structure as GaN, but also a larger exciton binding energy of 60 meV, which is 2.4 times that of GaN. This indicates that ZnO should be the most potential material to realize the next generation UV semiconductor laser. High quality ZnO films were deposited on c-Al_2O_3 substrate by the plasma-assisted metal-organic chemical vapor deposition. Strong optically pumped ultraviolet (UV) emission was observed. PL spectra under different excitation powers were performed. The PL intensity as a function of the excitation power, it is obvious that the PL intensity is linearly dependent on the excitation power. This indicates that the dominant photoluminescence of the sample should be the excitonic radiative recombination at room temperature.Optically pumped UV lasing spectrum of ZnO film was observed. The samples were optically pumped by a frequency-tripled mode-locked Nd∶YAG laser 355 nm emission, with 10 Hz repetition rate, and 15 ps pulse width. The pump beam was focused to a spot with diameter of about 25 μm on the surface of ZnO film. The threshold of lasing was as low as 0.28 μJ. From the lasing spectrum, we could find that the lasing peak has much narrow line-width less than 0.03 nm. In this paper, high quality ZnO films were grown on c-Al_2O_3 by MOCVD. Optimized growth condition was obtained by XRD and PL measurements. ZnO films were strongly c-oriented from XRD measurement. Optically pumped UV lasing was observed in all kinds of directions at room temperature. This was due to the self-formed resonance cavities.

Growth and Photoluminescence Characteristics of High Quality ZnO Films by Pulsed Laser Deposition (PLD) Method

The growth of nanoscale ZnO films by pulsed-spray evaporation chemical vapor deposition and their structural, electric and optical properties

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Optically Pumped Ultraviolet Lasing Property of ZnO Film

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

Structural and Optical Characterizations of ZnO Films Grown by Reactive Electron Beam Evaporation

Room Temperature Growth and Properties of ZnO Films by Pulsed Laser Deposition

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Low-temperature epitaxy of ZnO films on Si(0 0 1) and silica by reactive e-beam evaporation

Growth of Zn1-xMgxO Films by Pulsed Laser Deposition

Comparison of Structural and Optical Properties of ZnO Films Grown on Different Substrates at Low Temperatures

Effects of Oxygen Partial Pressure on the Properties of ZnO Thin Films Grown on Silicon (111) Substrate by Pulsed Laser Deposition

Characteristics of Zno Film Grown by Mocvd

Low-Temperature Epitaxy Of Zno Films On Si(001) And Silica By Reactive E-Beam Evaporation

Mocvd Growth and Properties of Zno Films Using Dimethylzinc and Oxygen

Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Growth of ZnO Film by Plasma-assisted MOCVD

Effect of oxygen pressure during the growth of ZnSnO3 epitaxial thin films on LiNbO3 substrates

Enhanced near-band-edge emission from a -plane ZnO thin films on SrTiO 3 substrates

Epitaxial Growth Of Zno Films On (100) And (001) Gamma-Lialo2 Substrates By Pulsed Laser Deposition