Abstract:Abstract The growth of hetero-epitaxial ZnO-AlN core–shell nanowires (NWs) and single crystalline AlN films on non-polar ZnO substrate at temperature of 380 °C by atomic layer deposition (ALD) was investigated. Structural characterization shows that the AlN shells have excellent single-crystal properties. The epitaxial relationship of [0002] ZnO //[0002] AlN , and [10−10] ZnO //[10−10] AlN between ZnO core and AlN shell has been obtained. The ZnO NW templates were subsequently removed by annealing treatment in forming gas, resulting in ordered arrays of AlN single-crystal nanotubes. The impact factors on the epitaxial growth of AlN films are thoroughly investigated. It turned out that the growth parameters including lattice mismatch between substrate and AlN, growth temperature, and the polarity of ZnO substrate play important roles on the growth of single-crystal AlN films by ALD. Finally, non-polar AlN films with single-crystalline structure have been successfully grown on m -plane ZnO (10−10) single-crystal substrates. The as-grown hollow AlN nanotubes arrays and non-polar AlN films with single-crystalline structures are suggested to be highly promising for applications in nanoscale devices. Our research has developed a potential method to obtain other inorganic nanostructures and films with single-crystalline structure at fairly low temperature.

Growth and Properties of ZnO Film Grown on AlN Buffer Layer by PLD

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Comparisons of Structural and Optical Properties of ZnO Films Grown on Sapphire and Si(001)

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (1 0 0)γ-LiAlO2 by pulse laser deposition

Growth of high-quality ZnO thin films on (11\bar{2}0) a-plane sapphire substrates by plasma-assisted molecular beam epitaxy

Growth of High-Quality ZnO Thin Films on ( 112̅0 ) A-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

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Synthesis of ZnAl 2 O 4 /Α-Al 2 O 3 Complex Substrates and Growth of GaN Films

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Synthesis of ZnAl2O4/alpha-Al2O3 complex substrates and growth of GaN films

Microstructure and Electrical Properties of Al-doped ZnO Thin Films

Enhanced SAW characteristics of a -plane AlN epitaxial films using ZnO buffer layer

Growth of Non-Polar A-Plane Zn1−Cd O Films by Pulsed Laser Deposition

ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

The Growth and Annealing of Single Crystalline Zno Films by Low-Pressure Mocvd

Preparation of single crystalline AlN thin films on ZnO nanostructures by atomic layer deposition at low temperature

Growth of Non-Polar Zn1−x Mg X O Thin Films with Different Mg Contents on R-Plane Sapphire Substrates by Plasma-Assisted Molecular Beam Epitaxy

Growth of Epitaxial C-Plane Zno Film on A-Plane Sapphire by Radio Frequency Reactive Magnetron Sputtering

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films

Epitaxial growth of non-polar m-plane ZnO thin films by pulsed laser deposition

MBE‐grown ZnO Film on Sapphire Substrate with Double Buffer Layers