Properties of ZnO thin films grown on Si substrates in vacuum and oxygen ambient by pulsed laser deposition

J ZHAO,L HU,W LIU,Z WANG

DOI: https://doi.org/10.1016/j.apsusc.2007.01.089

IF: 6.7

2007-01-01

Applied Surface Science

Abstract:Epitaxial ZnO thin films have been synthesized directly on Si(111) substrates by pulsed laser deposition (PLD) in vacuum. The reflection high-energy electron diffraction (RHEED) indicates that streaky patterns can be clearly observed from the ZnO epilayers prepared at 600 and 650°C, revealing a two-dimensional (2D) growth mode. While the ZnO thin film deposited in oxygen ambient shows ring RHEED pattern. There is a compressive in-plane stress existing in the ZnO epitaxial film, but a tensile one in the polycrystalline film. Compared with the ZnO epilayer, the ZnO polycrystalline film shows more intense ultraviolet emission (UVE) with a small full width at half maximum (FWHM) of 89meV. It is suggested that the atomically flat epilayers may be powerfully used as transitive stratums to grow high-quality ZnO films suitable for the fabrication of optoelectronic devices.