Effects of Substrate Temperature on Structural and Luminescent Properties of ZnO Thin Films Prepared by Pulsed Laser Deposition

赵杰,胡礼中,宫爱玲,刘维峰

DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.05.006

2008-01-01

Abstract:ZnO thin films have been synthesized on Si(111) substrates with a high oxygen pressure of 60Pa by pulsed laser deposition(PLD).The structural and luminescent properties of ZnO thin films as a function of substrate temperature were investigated by in situ reflection high-energy electron diffraction(RHEED),X-ray diffraction(XRD),and room-temperature photoluminescence(PL).The results of RHEED and XRD show that all ZnO thin films have a polycrystalline structure and are c-axis preferred oriented.The full width at half maximum(FWHM) of(002) diffraction peak decreases from 0.227-0.185° as the substrate temperature increases from 600-700℃.The thin film grown at 650℃ is almost stress-free,while there is a plane-in tensile stress in other samples.PL measurement indicates that ZnO thin film prepared at 650℃ has the most intensive ultraviolet(UV) emission and the smallest UV peak FWHM of 83meV.A low-energy UV peak at 3.25eV is detected when the substrate temperature increases to 700℃,which possibly result from a donor-acceptor-pair(DAP) transition.