Characteristics of Zinc Oxide Thin Films on Al2O3 Substratesgrown by Pulsed Laser Deposition Method

何建廷,曹文田,李田泽,庄惠照
DOI: https://doi.org/10.3969/j.issn.1001-2028.2008.12.019
2008-01-01
Abstract:At different substrate temperature,ZnO thin films were deposited on Al2O3 (0001) substrates by pulsed laser deposition (PLD) method. The effect of substrate temperatures on the crystalline quality,electrical and optical properties of the ZnO thin film were researched. The results show that there is only one diffraction peak of ZnO (0002) at 2θ=34°. Resistivities of ZnO thin films increase as the substrate temperature increases. One special emission peak photoluminescence (PL) is found at the wavelength of 410 nm when substrate temperature is 500℃ .
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