Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Fabrication of Columnar Silicon Thin Film at Low Temperature by Improved RTP

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Silicon nano-wires grown at low temperature

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma

Fabrication of Microcrystalline Silicon Thin Film and the Study of Its Microstructure and Stability

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

Polycrystalline Silicon Thin Film Transistors on Corning 7059 Glass Substrates Using Short Time, Low-Temperature Processing

Crystallization of As-Deposited Amorphous Silicon Films on Glass Prepared by Magnetron Sputtering with Different Substrate Biases and Temperatures

Selective Area Crystallization of Amorphous-Silicon Films by Low-Temperature Rapid Thermal Annealing

Enhanced Recrystallization of Ultra-Thin Α-Silicon Film by 2-D Confined Lattice Regrowth

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Solid-phase Crystallization and Dopant Activation of Amorphous Silicon Films by Pulsed Rapid Thermal Annealing

Fabrication method and mechanical properties of a novel flexible amorphous hydrogenated silicon film