Scr-Type Esd Protection Circuit For Rfics

Wang Yuan,Jia Song,Zhang Ganggang,Zhang Xing

DOI: https://doi.org/10.1109/ICASIC.2007.4415646

2007-01-01

Abstract:A novel SCR-type ESD protection circuit for RFICs is proposed, which have a good ESD level above RV, a low leakage current below 5pA, a low capacitive loading, and a low latch-up risk.

What problem does this paper attempt to address?

Low-Capacitance SCR Structure for RF I/O Application

Shurong Dong,Meng Miao,Jian Wu,Jie Zeng,Zhiwei Liu,Juin J. Liou

DOI: https://doi.org/10.1109/temc.2012.2216271

IF: 2.036

2013-01-01

IEEE Transactions on Electromagnetic Compatibility

Abstract:Electrostatic discharge (ESD) devices based on diodes and silicon controlled rectifier for RF I/O protection are evaluated on both ESD and RF performance. Varying from the architecture, layout design and metal interconnection, candidate devices show different parasitic capacitance, ESD efficiency, and turn on speed. Potential solution for further RF I/O application is verified.
Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

Fangjun Yu,Xinyu Zhu,Feifan Deng,Yipeng Chen,Shurong Dong

2022-01-01

Abstract:In this paper, a novel ring silicon-controlled rectifier (NRSCR) for electrostatic discharge (ESD) protection is proposed. Compared with conventional SCR, the trigger voltage of NRSCR is reduced by 3.2V, and the robustness is about twice that of conventional diode and SCR, which is suitable for ESD protection of low-voltage circuits.
Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Zhiwei Liu,Juin J. Liou,Shurong Dong,Yan Han

DOI: https://doi.org/10.1109/led.2010.2050575

IF: 4.8157

2010-01-01

IEEE Electron Device Letters

Abstract:Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.
Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

Fei Ma,Yan Han,Shurong Dong,Meng Miao,Hailiang Liang

DOI: https://doi.org/10.1109/led.2013.2265411

IF: 4.8157

2013-01-01

IEEE Electron Device Letters

Abstract:An improved low-voltage-triggered silicon-controlled rectifier is proposed for on-chip electrostatic discharge (ESD) protection in a 65-nm radio frequency CMOS. The experimental results show that it has a very low intrinsic capacitance of 18 fF at zero bias, a low and tunable trigger voltage in the range of 2.2-4.5 V, a low leakage current of 0.3 nA, and a low overshoot voltage under very fast ESD pulse. It achieves a 1.9-A failure current with only 50 x 9-mu m(2) layout area.
A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Mingliang Li,Shurong Dong,Juin J. Liou,Bo Song,Yan Han

DOI: https://doi.org/10.1109/led.2010.2058844

IF: 4.8157

2010-01-01

IEEE Electron Device Letters

Abstract:A novel capacitance-coupling-triggered silicon-controlled rectifier (CCTSCR) for on-chip electrostatic discharge (ESD) protection is proposed and verified in a 65-nm logic CMOS process. The trigger voltage of the CCTSCR can be adjusted by using a variable coupling capacitor, and a low trigger voltage of 2.15 V can be achieved through increasing the coupling capacitance. Compared with the conventional diode-triggered SCR, the CCTSCR has a similar robustness but a lower leakage current, particularly at an elevated temperature. The CCTSCR is suitable for I/O ESD protection of low-voltage CMOS integrated circuits.
Complementation SCR for RF IC ESD protection (Electromagnetism)

Shurong Dong,Ming Li,Wei Guo,Yan Han,Dahai Huang,Bo Song

2010-01-01

Electronics Letters

Abstract:Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 μm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.
Complementation SCR for RF IC ESD Protection

S. Dong,M. Li,W. Guo,Y. Han,D. Huang,B. Song

DOI: https://doi.org/10.1049/el.2010.2567

2010-01-01

Electronics Letters

Abstract:Complementation silicon controlled rectifiers (CSCRs) with various novel layouts are designed in 0.18 mm RF CMOS process, including general CSCR, strip CSCR (SCSCR), island-strip CSCR (ISCSCR) and island-block CSCR (IBCSCR). SCSCR has highest FOM; however, the ISCSCR has lowest parasitic capacitance. Appropriate division layout of the CSCRs should be addressed to achieve a balance between active area capacitance and edge capacitance.
Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

f M,LIANG Hailian,DONG Shurong

DOI: https://doi.org/10.3969/j.issn.1000-3819.2013.03.019

2013-01-01

Abstract:Based on the bi-directional silicon controlled rectifier(SCR),two novel electrostatic discharge(ESD) protection devices have been proposed,which can prevent ESD stresses on both the positive and the negative directions.While the conventional dual-direction SCR ESD protection device is usually triggered by the avalanche breakdown between N-well and P-well,the two proposed devices use the embedded NMOS/PMOS as the triggering structure to decrease the trigger voltage.Both the modified structures are implemented in a 0.18 μm RF CMOS process and examined by the transmission line pulse testing system.Experimental results indicate that the proposed devices have lower trigger voltage,smaller leakage current(~nA),a protection level passing 2 kV of human body model,and a high holding voltage(>3.3 V),making them immune to the latch-up in 1.8 V or 3.3 V I/O ESD protection applications.
Whole Chip Esd Protection for 2.4 Ghz Lna

H. Jin,S. R. Dong,M. Miao,J. Wu,F. Ma,J. K. Luo,Juin J. Liou

DOI: https://doi.org/10.1109/edssc.2011.6117571

2011-01-01

Abstract:Whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under 0.18 μm radio frequency (RF) CMOS process is proposed in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for I/O pad ESD protection is evaluated and compared with traditional SCR and diode. Results show that the island complementary SCR (MSCRIsland) structure has highest figure of merit (FOM) and its ESD protection for RF I/O passes 6 kV human body model (HBM), while extra 0.28 dB noise figure (NF) and 178 fF capacitance is introduced into LNA by this ESD protection. LNA power clamp ESD protection is also designed as RC triggered various devices, such as NMOS, SCR and their mixture. Results show that RC trigger NMOS-SCR has high robustness and turn-on speed and its power clamp protection passes 5 kV HBM.
Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Weihuai Wang,Hao Jin,Wei Guo,Shurong Dong,Wei Liang,Juin J. Liou,Yan Han

DOI: https://doi.org/10.1016/j.microrel.2015.12.038

IF: 1.6

2016-01-01

Microelectronics Reliability

Abstract:A novel silicon-controlled rectifier (SCR)-based device with very small snapback is proposed in this paper. New features including an embedded gate-to-VDD PMOS (GDPMOS) and lateral n-p-n BJT are used to achieve low trigger and high holding voltages suitable for electrostatic discharge (ESD) protection of 28-nm CMOS technology with very narrow ESD operation windows. Measured results show an ESD operation window of less than 1V. TCAD simulation is also carried out to demonstrate the underlying physical mechanisms.
Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Xu Ze-kun,Shen Hong-yu,Hu Tao,Guo Wei,Dong Shu-rong

DOI: https://doi.org/10.1109/ipfa47161.2019.8984868

2019-01-01

Abstract:A novel silicon-controlled rectifier (SCR) named VSCR with simple layout structure is proposed in this paper. With an embedded SCR structure in a traditional diode by using p-type ESD implantation, the proposed device achieves a high ESD robustness with a current level of 33.0 mA/μm. In addition, VSCR also have low trigger voltage and high holding voltage which make it suitable for ESD protection of 28-nm CMOS process. This paper also use a gate-monitor in parallel with the VSCR to obtain the true failure current of the device, which further proves that the structure can be used for ESD protection of the Core circuit under the 28-nm process.
Scr Device With High Holding Current For On-Chip Esd Protection

Peng Zhang,Yuan Wang,Song Jia,Xing Zhang

DOI: https://doi.org/10.1109/EDSSC.2011.6117729

2011-01-01

Abstract:A silicon-controlled rectifier (SCR) device for on-chip ESD protection is proposed. The Anode pad of the device is directly connected to the drain of the embedded nMOS crossing the N-well P-suhstrate junction of the nMOS to achieve a high holding current. Thus, latch-up immune current of SCR type ESD proteetion device is achieved by this method.
Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

Qiang Cui,Shurong Dong,Yan Han,Qiang Cui

DOI: https://doi.org/10.1109/EDSSC.2012.6482791

2012-01-01

Abstract:The waffle layout SCR-based ESD protection device is presented and analyzed in this paper. This waffle structure with symmetrical layout is designed to generate more current paths to distribute ESD currents better. TLP I-V measurement results show that, the stand-alone waffle layout SCR costs only 39 percent silicon area of conventional stripe layout SCR, but can achieve better ESD robustness. Results also show that the trigger voltage and current handling ability of waffle layout SCR can be adjustable to meet different operating demands by changing the device dimensions.
A Novel ESD Clamp Protection Circuit with Low Leakage Current and High Latch-up Immunity

WANG Yuan,JIA Song,ZHANG Ganggang,CHEN Zhongjian,JI Lijiu

DOI: https://doi.org/10.3321/j.issn:0479-8023.2007.03.020

2007-01-01

Abstract:A novel ESD clamp protection circuit named gate-controlled SCR cascade diode string(gcSCR-CDS) is proposed.Compared with the traditional CDS device,this novel structure has a high ESD performance due to its low leakage current and low turn-on resistance by inserting a SCR transistor.A gate-controlled PMOS transistor is also used to immunize its latch-up effects.This new structure is performed in 0.35?μm CMOS process.The measured results show that it has a low leakage current about 12?nA and a high ESD robustness above 8?kV.
Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Xiaoyang Du,Shurong Dong,Yan Han,Juin J. Liou,Mingxu Huo,You Li,Qiang Cui,Dahai Huang,Demiao Wang

DOI: https://doi.org/10.1016/j.microrel.2008.04.005

IF: 1.6

2008-01-01

Microelectronics Reliability

Abstract:Electrostatic discharge (ESD) protection design is challenging for RF integrated circuits (ICs) because of the trade-off between the ESD robustness and parasitic capacitance. ESD protection devices are fabricated using the 0.18-μm RF CMOS process and their RF ESD characteristics are investigated by the transmission line pulsing (TLP) tester. The results suggest that the silicon controlled rectifier (SCR) is superior to the diode and NMOS from the perspective of ESD robustness and parasitic, but the SCR nevertheless possesses a longer turn-on time.
Whole Chip ESD Protection Design for 2.4 GHz LNA

LIANG Hailian,DONG Shurong,GU Xiaofeng,HAN Yan

DOI: https://doi.org/10.3969/j.issn.1000-3819.2012.06.009

2012-01-01

Abstract:The whole chip electrostatic discharge (ESD) protection for 2.4 GHz low noise amplifier (LNA) under the 0.18 μm radio frequency CMOS process is proposed and verified in this paper. Complementary silicon controlled rectifier (SCR) with different layouts for RF I/O pad ESD protection is evaluated and compared with the traditional SCR and diode. Measurement results show that the island complementary SCR has good ESD protection performance. Various triggering methods used in the ESD protection structure are studied for LNA power clamp ESD protection. Results indicate that RCMOS_SCR has high robustness and turn-on speed. In the whole chip ESD protection based on the above-mentioned two structures, island complementary SCR is applied as RF I/O ESD protection, which introduce 0.16 dB noise figure (NF) and 176 fF parasitic capacitance, at the same time it passes 6 kV human body model (HBM). Power clamp ESD protection uses RCMOS trigger SCR, which passes 5 kV HBM. Above ESD design has been verified and applied in Fundry.
RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

Hailian Liang,Xiaofeng Gu,Shurong Dong,Juin J. Liou

DOI: https://doi.org/10.1109/tdmr.2015.2463120

IF: 1.886

2015-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:A novel lateral diffusion MOS-embedded silicon-controlled rectifier with a high holding current (LDMOS-SCR-HHC) is proposed and verified in a 0.25-mu m 18-V Bipolar-CMOS-DMOS process. By adding an imbedded P+ region located next to the source region of an LDMOS-SCR and connecting the P+ region to the gate, the LDMOS-SCR-HHC exhibits a relatively HHC, small trigger voltage, and strong electrostatic discharge (ESD) robustness. As such, the proposed LDMOS-SCR-HHC is an attractive device for constructing effective and latch-up immune ESD protection solutions for high-voltage I/O ports.
A novel straight through-MOS-triggered SCR for on-chip ESD protection

Jianfeng Zheng,Fei Ma,Yan Han,Hailian Liang,Shurong Dong,Jian Wu

2013-01-01

Abstract:A novel straightthrough-MOS-triggered silicon controlled rectifier (STSCR) and conventional MOS-triggered SCR(TSCR) for on-chip electrostatic discharge (ESD) protection are verified in a 0.13 μm CMOS process. TLP (Transmission-line-pulsing system) testing results for these two structures show that the novel straightthrough-MOS-triggered SCR structure possesses a lower trigger voltage, a smaller turn-on resistance, a faster turn-on efficiency and a higher failure current.
A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

Mingliang Li,Shurong Dong,Meng Miao,Bo Song,Fei Ma,Yan Han

DOI: https://doi.org/10.1109/ICSICT.2010.5667411

2010-01-01

Abstract:A capacitance coupling complementation silicon controlled rectifies (CCCSCR) for electrostatic discharge (ESD) protection application is proposed and verified in 0.5μm BCD process. Compared with traditional complementation silicon controlled rectifies (CSCR), the CCCSCR has a lower trigger voltage. The coupling capacitance, as a tunable trigger of SCR, can meet different protection application demands. And the CCCSCR can fulfill all dual direction ESD stress mode protection, including I/O-VSS, I/O-VDD and VDD-VSS.
A Novel SCR for ESD Protection in ICs

Qiang Cui,Juin J. Liou,Yan Han,Shurong Dong,Yuming Zhu,Cheng Peng

DOI: https://doi.org/10.1109/icasic.2007.4415705

2007-01-01

Abstract:A novel silicon controled rectifiers (SCR) is presented in this paper. This SCR, named as HH-LVTSCR, is characterized as high holding voltage and low trigger voltage. Through measuring the current versus voltage (I-V) by TLP, this SCR's properties, including trigger voltage, holding voltage and failure current, are investigated. Results show that this SCR has a good electrostatic discharge (ESD) protection performance for integrated circuits (ICs). Further more, this SCR's I-V is insightfully analyzed, such as the relationship between failure current and holding voltage, the effects of ambient temperature on holding voltage and trigger voltage, the effects of multiple-finger layout on the performance of devices. The results suggest that n-type devices perform better than p-type devices when a low holding voltage(VH) is demanded ,however p-type devices perform better while a relatively high holding voltage is required.

Scr-Type Esd Protection Circuit For Rfics

Low-Capacitance SCR Structure for RF I/O Application

Novel Ring Silicon-Controlled Rectifier for ESD Protection of Low-Voltage Circuits

Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications

Improved Low-Voltage-Triggered Scr Structure for Rf-Esd Protection

A Novel Capacitance-Coupling-Triggered SCR for Low-Voltage ESD Protection Applications

Complementation SCR for RF IC ESD protection (Electromagnetism)

Complementation SCR for RF IC ESD Protection

Investigation on Bi-directional SCR ESD Protection Devices in a 0.18 μm RF CMOS Process

Whole Chip Esd Protection for 2.4 Ghz Lna

Very Small Snapback Silicon-Controlled Rectifier for Electrostatic Discharge Protection in 28 Nm Processing.

Vertical Silicon-Controlled Rectifier for ESD Protection under 28nm Ps Process

Scr Device With High Holding Current For On-Chip Esd Protection

Investigation Of Waffle Structure Scr For Electro-Static Discharge (Esd) Protection

A Novel ESD Clamp Protection Circuit with Low Leakage Current and High Latch-up Immunity

Evaluation of RF electrostatic discharge (ESD) protection in 0.18-μm CMOS technology

Whole Chip ESD Protection Design for 2.4 GHz LNA

RC-Embedded LDMOS-SCR with High Holding Current for High-Voltage I/O ESD Protection

A novel straight through-MOS-triggered SCR for on-chip ESD protection

A capacitance coupling complementation SCR for on-chip electrostatic discharge protection

A Novel SCR for ESD Protection in ICs