Abstract:The electrical and optical stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) related to the channel composition (the concentration of oxygen vacancy, V-O(2+)) and gate dielectrics are discussed. With the filling of V-O(2+), the electron density (Ne) in a-IGZO decreases from 7.5 to 3.8 (x10(16)cm(-3)) with the increase of Fermi level and decrease of density of deep charged traps, and therefore the electrical stability of TFTs decreases from A Vth of 4.5 to 10V. The optical stability of a-IGZO TFTs is also sensitive to the V-O(2+). With the increase of V-O(2+) the absorption increases and Eg decreases for a-IGZO, therefore the number of generating photoelectrons increases and the stability of TFT. decreases. The SiNx-gated TFT shows good electrical stability, but its optical stability is an issue, which shows a larger off-state photo leakage current (Delta I-d similar to 13 mu A) and decrease of Vth (vertical bar Delta V-th vertical bar>14V) than those of the SiO2-gated TFT (Delta I-d similar to 12 nA, vertical bar Delta V-th vertical bar similar to 8V). The model of charge trapping at the interface of gate dielectric/a-IGZO is only valid for the mechanism of electrical stability. It is proposed that due to the larger absorption of visible light of SiNX gate dielectric, and the smaller Delta Ev between SiNX and a-IGZO film, the photo created holes carriers in a-IGZO.chginel can be injected more easily into SiNX during light on resulting a significant increase of N-e in a-IGZO, therefore an apparent decrease of V-th for TFT.

The effect of N/Si ratio on the a-SiiH/SiNx interface of a-SirH/SiNx TFT

Interfacial Structures and Properties of SiN Layer in a-Si Thin Film Transistors

Silicon Doping and N2 Annealing Effects on Zn3N2 Thin Film Transistors

A Comparative Study on Self-Aligned Top-Gate Thin-Film Transistors with Silicon Nitride as the Interlayer

Interface Properties of Silicon Nitride Thin Films As Gate Insulator Layer for P-Si Thin Film Transistor

Effects of SiON/III-nitride Interface Properties on Device Performances of GaN-based Power Field-Effect Transistors

Enhancements of electrical properties and positive bias instability in self-aligned top-gate a-IGZO TFTs by hydrogen incorporation

Effect of Si on the Energy Band Gap Modulation and Performance of Silicon Indium Zinc Oxide Thin-Film Transistors

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Electrical performance of a-Si:H and poly-Si TFTs with heating stress

Gate Bias Stress-Induced Threshold Voltage Shift Effect of a-IGZO TFTs with Cu Gate

Effects of Silicon Doping on the Performance of Tin Oxide Thin Film Transistors

Electronic Properties and Charge Storage Effect of Amorphous SiN Passivated Nanocrystalline Silicon

The Effect Of Asymmetrical Electrode Form After Negative Bias Illuminated Stress In Amorphous Igzo Thin Film Transistors (Vol 110, 103502, 2017)

Effect Of N-Doping On The Microstructure And Properties Of Amorphous Sic:H Diffusion Barrier Films

Effects of Nitrogen Doping on Performance of Amorphous SnSiO Thin Film Transistor

Fabrication of Flexible Amorphous InGaZnO Thin Film Transistors with SiOx/TaOx Gate Insulators

Effect of High Deposition Rate on Chemical Bonds and Properties of SiN Film

High reliability of vanadyl-phthalocyanine thin-film transistors using silicon nitride gate insulator

9.1: Effect of Nitrogen Doping Content on Electrical Properties and Stability of a‐IGZO TFT