Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

Blue-Green Light Emission from A-Sicx : H-Based Fabry-Perot Microcavities

Room Temperature Luminescent Properties of Si-Based Fabry-Perot Microcavity

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Red Light Emission from Si-Based Fabry-Perot Microcavities

Study on A-Sic_x∶h Microcavity Prepared by PECVD

Design of Si-based Vertical Cavity Surface Light Emitter

All amorphous SiC based luminescent microcavity

Optically Pumped Mid-Infrared Light Emitter on Silicon

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

The Fabrication of Nc-Si/Sio2 Multilayers and Blue-Light Emission

Si-based solid blue emitters from 3C-SiC nanocrystals

Room-temperature 1.54-μm electroluminescence from Er-doped Si-rich SiO2 films deposited on p-Si by magnetron sputtering

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Electroluminescence of a-SiCx p-i Junction

Green Electro- And Photoluminescence From Nanocrystalline Si Film Prepared By Continuous Wave Ar+ Laser Annealing Of Heavily Phosphorus Doped Hydrogenated Amorphous Silicon Film

Blue light emission in nc-Si/SiO2 multilayers fabricated using layer by layer plasma oxidation