Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths
A. Shakoor,R. Lo Savio,P. Cardile,S. L. Portalupi,D. Gerace,K. Welna,S. Boninelli,G. Franzo,F. Priolo,T. F. Krauss,M. Galli,L. O Faolain
DOI: https://doi.org/10.1002/lpor.201200043
2013-06-24
Abstract:Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\Delta}{\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications.
Optics