Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

Silicon-based one-dimensional photonic crystal microcavity

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

High- Q Photonic Crystal Cavity in a Single-Mode Silicon Ridge Waveguide

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Fabrication of Optical Cavities with Femtosecond Laser Pulses

High-Q and High-Order Side-Coupled Air-Mode Nanobeam Photonic Crystal Cavities in Silicon

Silicon photonic crystal cavities at near band-edge wavelengths

High-Q Antisymmetric Multimode Nanobeam Photonic Crystal Cavities in Silicon Waveguides

Silicon optical waveguides using photonic bandgap for bioparticle sensing

Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

A Hollow‐Core Optical Cavity Built in a Three‐Layer Silicon Photonic Crystal

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Light Confinement in A Low-Refraction-Index Microcavity Bonded on A Silicon Substrate

Tuning of Silicon Nitride Micro Cavities by Controlled Nanolayer Deposition

All amorphous SiC based luminescent microcavity

Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

Two-Dimensional Silicon Photonic Crystal Slab Devices

High-Q Weakly Modulated Nanobeam Cavity Based On A Suspended Silicon Dioxide Waveguide

Microcavity induced by a few-layer GaSe crystal on a silicon photonic crystal waveguide for efficient optical frequency conversion

High-Q Photonic Crystal Nanobeam Cavities on Silicon

Photonic-bandgap microcavities in optical waveguides