Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

Luminescence behavior from amorphous silicon-carbide film-based optical microcavities

All amorphous SiC based luminescent microcavity

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Angular dependent luminescence behavior in one-dimensional Si-based microcavities

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Photoluminescence from silicon dioxide photonic crystal cavities with embedded silicon nanocrystals

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Room Temperature Luminescent Properties of Si-Based Fabry-Perot Microcavity

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

Silicon-based one-dimensional photonic crystal microcavity

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Luminescent and Structural Properties of Electron-Irradiated Silicon Light-Emitting Diodes with Dislocation-Related Luminescence

Narrow-Line Light Emission from Porous Silicon Multilayers and Microcavities

Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide

Localized State-Induced Enhanced Intrinsic Phonon-Free Optical Transition in Silicon Nanocrystals

Photoluminescence studies of porous silicon microcavities

Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon